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dc.contributor.authorSu, CYen_US
dc.contributor.authorChen, LPen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorHo, YPen_US
dc.contributor.authorTseng, BMen_US
dc.contributor.authorLin, DCen_US
dc.contributor.authorLee, HYen_US
dc.contributor.authorKuan, JFen_US
dc.contributor.authorDeng, YMen_US
dc.contributor.authorChen, CLen_US
dc.contributor.authorLeu, LYen_US
dc.contributor.authorWen, KAen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:45:02Z-
dc.date.available2014-12-08T15:45:02Z-
dc.date.issued2000-07-20en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20000904en_US
dc.identifier.urihttp://hdl.handle.net/11536/30383-
dc.description.abstractThe effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.en_US
dc.language.isoen_USen_US
dc.titleEffect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20000904en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue15en_US
dc.citation.spage1280en_US
dc.citation.epage1281en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088677700018-
dc.citation.woscount4-
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