標題: | Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs |
作者: | Kao, HL Chin, A Liao, CC Chen, CC McAlister, SP Chi, CC 奈米科技中心 Center for Nanoscience and Technology |
關鍵字: | lifetime;minimum noise figure (NFmin);model;RF noise;stress |
公開日期: | 1-四月-2006 |
摘要: | in this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-mu m MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NF in model, where the simulated results match the measured device characteristics well, both before and after electrical stress. |
URI: | http://dx.doi.org/10.1109/TED.2006.870284 http://hdl.handle.net/11536/12404 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2006.870284 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 53 |
Issue: | 4 |
起始頁: | 636 |
結束頁: | 642 |
顯示於類別: | 期刊論文 |