Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs

doi:10.1109/TED.2006.870284

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kao, HL	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Liao, CC	en_US
dc.contributor.author	Chen, CC	en_US
dc.contributor.author	McAlister, SP	en_US
dc.contributor.author	Chi, CC	en_US
dc.date.accessioned	2014-12-08T15:16:53Z	-
dc.date.available	2014-12-08T15:16:53Z	-
dc.date.issued	2006-04-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2006.870284	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12404	-
dc.description.abstract	in this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-mu m MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NF in model, where the simulated results match the measured device characteristics well, both before and after electrical stress.	en_US
dc.language.iso	en_US	en_US
dc.subject	lifetime	en_US
dc.subject	minimum noise figure (NFmin)	en_US
dc.subject	model	en_US
dc.subject	RF noise	en_US
dc.subject	stress	en_US
dc.title	Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2006.870284	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	53	en_US
dc.citation.issue	4	en_US
dc.citation.spage	636	en_US
dc.citation.epage	642	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000236473500008	-
dc.citation.woscount	13	-
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