Calibration 90 nm node RF mosfets, including stress degradation

Abstract

Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.51 dB, at 10 GHZ, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak f(T) of 152 GHz, coinciding with the peak transconductance (g). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress. (c) 2007 Wiley Periodicals, Inc.