Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
| dc.citation.epage | 1281 | en_US |
| dc.citation.issue | 15 | en_US |
| dc.citation.spage | 1280 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Su, CY | en_US |
| dc.contributor.author | Chen, LP | en_US |
| dc.contributor.author | Chang, SJ | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Ho, YP | en_US |
| dc.contributor.author | Tseng, BM | en_US |
| dc.contributor.author | Lin, DC | en_US |
| dc.contributor.author | Lee, HY | en_US |
| dc.contributor.author | Kuan, JF | en_US |
| dc.contributor.author | Deng, YM | en_US |
| dc.contributor.author | Chen, CL | en_US |
| dc.contributor.author | Leu, LY | en_US |
| dc.contributor.author | Wen, KA | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:02Z | |
| dc.date.available | 2014-12-08T15:45:02Z | |
| dc.date.issued | 2000-07-20 | en_US |
| dc.description.abstract | The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours. | en_US |
| dc.identifier.doi | 10.1049/el:20000904 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20000904 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30383 | |
| dc.identifier.wosnumber | WOS:000088677700018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs | en_US |
| dc.type | Article | en_US |