Browsing by Author "Kung, Li-Jen"

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Copper phthalocyanine buffer layer to enhance the charge injection in organic thin-film transistors
(2007-02-12)
Chen, Fang-Chung
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Kung, Li-Jen
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Chen, Tung-Hsien
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Lin, Yung-Sheng
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光電工程學系
Copper phthalocyanine (CuPC) has been used as the buffer layer for source and drain electrodes to improve the performance of organic thin-film transistors. The mobility was improved by almost onefold after the modification. By incorporating with CuPC, the contact resistance was reduced, deduced from the line-transfer method. The higher hole current observed in the hole-only diode after adding CuPC further confirms the improvement of hole-injection efficiency. It is concluded that the device improvement is attributed to the reduction of contact resistance, which resulted from the Fermi level pinning at the induced gap states at the Au/CuPC interface. (c) 2007 American Institute of Physics.
Efficient hole-injection in highly transparent organic thin-film transistors
(2007)
Chen, Fang-Chung
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Lin, Yung-Sheng
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Chen, Tung-Hsien
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Kung, Li-Jen
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光電工程學系
Highly transparent organic thin-film transistors (OTFTs) based on pentacene have been demonstrated successfully. By inserting one layer of metal oxides between the transparent electrodes and the semiconductor, the device performance was enhanced dramatically. Meanwhile, the average transmittance, which is as high as 72.2%, in the visible region has been realized. The high transmittance is among the highest values reported for thin-film transistors made of organic semiconductors. Furthermore, from the results of the transfer line method, it is realized that device enhancement is contributed from reduction of the contact resistance. (c) 2007 The Electrochemical Society.
Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics
(2006-10-01)
Chen, Fang-Chung
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Chuang, Chiao-Shun
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Lin, Yung-Sheng
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Kung, Li-Jen
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Chen, Tung-Hsien
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linked poly-4-vinylphenol (PVP) and titanium dioxide (TiO2) nanoparticles. In order to obtain highly soluble TiO2 nanoparticles in organic solutions, the surface of nanoparticles was modified with organosiloxane. Moreover, the concern of higher leakage current, while using the high dielectric nanocomposite insulators, has been overcome by further applying another poly(alpha-methylstrylene) layer. As a result. we have demonstrated low-voltage OTFTs, which can be operated within 10 V. (C) 2006 Elsevier B.V. All rights reserved.
Organic thin-film transistors based on nanocomposite gate insulators for high-current driving applications
(2005)
Chuang, Chiao-Shun
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Lin, Yung-Sheng
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Kung, Li-Jen
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Chen, Dong-Sian
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Chen, Fang-Chung
Highly performance organic thin-film transistors (OTFTs) incorporated with nanoparticles in the dielectric insulators have been demonstrated. The dielectric layers consist of cross-linked poly-4-vinylphenol (PVP) and high dielectric titanium dioxide (TiO(2)) nanoparticles. In order to increase the solubility of TiO(2) nanoparticles in organic solutions, the surface of natioparticles was modified with organosilozane. Moreover, the concern of higher leakage current, while using the nano-composite insulators, has been overcome by P8 treatment. In addition, several models, which have been used to describe the dielectric behavior of composite materials, are also discussed.