Organic thin-film transistors based on nanocomposite gate insulators for high-current driving applications

Abstract

Highly performance organic thin-film transistors (OTFTs) incorporated with nanoparticles in the dielectric insulators have been demonstrated. The dielectric layers consist of cross-linked poly-4-vinylphenol (PVP) and high dielectric titanium dioxide (TiO(2)) nanoparticles. In order to increase the solubility of TiO(2) nanoparticles in organic solutions, the surface of natioparticles was modified with organosilozane. Moreover, the concern of higher leakage current, while using the nano-composite insulators, has been overcome by P8 treatment. In addition, several models, which have been used to describe the dielectric behavior of composite materials, are also discussed.