Browsing by Author "LIN, CJ"
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Item type:Item, A PARALLEL ALGORITHM FOR GENERATING COMBINATIONS(1989) ;LIN, CJ ;應用數學系 ;資訊工程學系 ;Department of Applied MathematicsDepartment of Computer ScienceItem type:Item, A SYSTOLIC ALGORITHM FOR DYNAMIC-PROGRAMMING(1994-01-01) ;LIN, CJ ;交大名義發表 ;應用數學系 ;National Chiao Tung UniversityDepartment of Applied MathematicsWe present a formal systolic algorithm to solve the dynamic programming problem for an optimal binary search tree. For a fixed integer j such that 2 less-than-or-equal-to j less-than-or-equal-to n, first we derive a linear systolic array to evaluate the minimal cost c(i,j) for 1 less-than-or-equal-to i < j. Then we combine these (n - 1) linear systolic arrays to form a two-dimensional systolic array. The computational model consists of inverted right perpendicular (n2 + 2n - 4)/4 inverted left perpendicular processing elements. The algorithm requires (2n - 3) time steps to solve this problem. The elapsed time within a time step is independent of the problem size n. It is suitable for the VLSI implementation due to the identical and simple structure of processing elements. We also prove the correctness of this algorithm by induction.Item type:Item, A SYSTOLIC ALGORITHM FOR SOLVING KNAPSACK-PROBLEMS(1994) ;LIN, CJ ;CHEN, SJ ;應用數學系Department of Applied MathematicsA systolic algorithm for solving the O/1-knapsack problems with n items is presented. The computational model used is a tree structure which consists of 2(n) identical processing elements (PEs). Each PE executes the same program at any time step. The time complexity varies from n to 3n - 2 steps which includes all the input/output data communication time. The design process and the correctness verification of this algorithm are considered in detail.Item type:Item, A SYSTOLIC DESIGN FOR GENERATING COMBINATIONS IN LEXICOGRAPHIC ORDER(1990-01-01) ;TSAY, JC ;LIN, CJ ;交大名義發表 ;資訊科學與工程研究所National Chiao Tung UniversityItem type:Item, A SYSTOLIC GENERATION OF COMBINATIONS(1989) ;LIN, CJ ;TSAY, JC ;應用數學系Department of Applied MathematicsItem type:Item, ADAPTIVE FUZZY CONTROL OF UNSTABLE NONLINEAR-SYSTEMS(1995-09-01) ;LIN, CJ ;LIN, CT ;電控工程研究所Institute of Electrical and Control EngineeringThis paper addresses the structure and an associated on-line learning algorithm of a feedforward multilayer connectionist network for realizing the basic elements and functions of a traditional fuzzy logic controller. The proposed Fuzzy Adaptive Learning Control Network (FALCON) can be contrasted with the traditional fuzzy logic control systems in their network structure and learning ability. An on-line structure/parameter learning algorithm, called FALCON-ART, is proposed for constructing the FALCON dynamically. The FALCON-ART can partition the input/output space in a flexible way based on the distribution of the training data. Hence it can avoid the problem of combinatorial growing of partitioned grids in some complex systems. It combines the backpropagation learning scheme for parameter learning and the fuzzy ART algorithm for structure learning. More notably, the FALCON-ART can on-line partition the input/output spaces, tune membership functions, and find proper fuzzy logic rules dynamically without any a priori knowledge or even any initial information on these. The proposed learning scheme has been successfully used to control two unstable nonlinear systems. They are the seesaw system and the inverted wedge system.Item type:Item, ADAPTIVE FUZZY CONTROL OF UNSTABLE NONLINEAR-SYSTEMS(1995-09-01) ;LIN, CJ ;LIN, CT ;電控工程研究所Institute of Electrical and Control EngineeringThis paper addresses the structure and an associated on-line learning algorithm of a feedforward multilayer connectionist network for realizing the basic elements and functions of a traditional fuzzy logic controller. The proposed Fuzzy Adaptive Learning Control Network (FALCON) can be contrasted with the traditional fuzzy logic control systems in their network structure and learning ability. An on-line structure/parameter learning algorithm, called FALCON-ART, is proposed for constructing the FALCON dynamically. The FALCON-ART can partition the input/output space in a flexible way based on the distribution of the training data. Hence it can avoid the problem of combinatorial growing of partitioned grids in some complex systems. It combines the backpropagation learning scheme for parameter learning and the fuzzy ART algorithm for structure learning. More notably, the FALCON-ART can on-line partition the input/output spaces, tune membership functions, and find proper fuzzy logic rules dynamically without any a priori knowledge or even any initial information on these. The proposed learning scheme has been successfully used to control two unstable nonlinear systems. They are the seesaw system and the inverted wedge system.Item type:Item, AN ART-BASED FUZZY ADAPTIVE LEARNING CONTROL NETWORK(1994) ;LIN, CJ ;LIN, CT ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, ANALYSIS OF MODIFIED-MODEL FOR COMMERCIAL FISHING WITH POSSIBLE EXTINCTIVE FISHERY RESOURCES(1981) ;CHENG, KS ;LIN, CJ ;WANG, AY ;應用數學系Department of Applied MathematicsItem type:Item, EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN DEGENERATE N-TYPE INDIUM-ANTIMONIDE IN QUANTIZING MAGNETIC-FIELDS(1992-01-01) ;WU, CC ;TSAI, JS ;LIN, CJ ;應用數學系電控工程研究所Free-carrier absorption in degenerate semiconductors such as n-type InSb has been investigated in quantizing magnetic fields at a very low temperature limit. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is the acoustic phonon scattering via the deformation potential coupling. Numerical results show that both real and imaginary parts of the absorption coefficient in degenerate semiconductors oscillate quite considerably with the magnetic field from the lower-field up to a higher-field region and some discontinuous points can be observed there. This is different from the numerical results shown in nondegenerate semiconductors.Item type:Item, EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN SEMICONDUCTORS AT QUANTIZING MAGNETIC-FIELDS(1990-09-15) ;WU, CC ;TSAI, JS ;LIN, CJ ;應用數學系電控工程研究所Item type:Item, EFFECT OF NONPOLAR OPTICAL PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN HEAVILY-DOPED N-TYPE GERMANIUM(1993-08-01) ;WU, CC ;LIN, CJ ;應用數學系 ;電控工程研究所Department of Applied MathematicsThe effect of nonpolar optical phonon scattering on the free-carrier absorption in n-type semiconductors such as germanium has been investigated quantum mechanically in quantizing magnetic fields. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons in solids is that of nonpolar optical phonon scattering. When the radiation field is polarized parallel to the magnetic field, the absorption coefficient will be of complex value due to the interaction of the radiation field and the optical phonon field with electrons in semiconductors. Results show that real and imaginary parts of the absorption coefficient oscillate quite considerably with the magnetic field in the high fields for the heavily doped n-type Ge. Both real and imaginary parts of the absorption coefficient appear as positive and negative values when changing the magnetic field. In low magnetic fields, the imaginary part of the absorption coefficient disappears. However, if the density of electrons increases, the imaginary part of the absorption coefficient will increase with the magnetic field in low fields. Moreover, it is also shown that the amplitudes of oscillations for the real and imaginary parts of the absorption coefficient do not vary in a regular trend with the density of electrons.Item type:Item, EFFECT OF NONPOLAR OPTICAL PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN QUANTIZING MAGNETIC-FIELDS(1993) ;WU, CC ;LIN, CJ ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, EFFECT OF PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN N-TYPE INDIUM-ANTIMONIDE FILMS(1995-02-01) ;WU, CC ;LIN, CJ ;應用數學系 ;電控工程研究所Department of Applied MathematicsThe free-carrier absorption in n-type InSb films has been investigated for carriers confined in quasi-two-dimensional (2D) semiconductors with the nonparabolic energy band of electrons. We discuss the effect of phonon scattering on the free-carrier absorption coefficient (alpha) for both deformation-potential coupling and piezoelectric coupling. alpha is found to depend on the photon polarization relative to the direction normal to the quasi-2D structure, the photon frequency, the film thickness, and the temperature. alpha could be complex due to the interaction between photons, phonons, and electrons. (i) When the acoustic phonon scattering is dominant, alpha increases with decreasing the film thickness for phonons polarized parallel or perpendicular to the layer plane. It is also shown that alpha increases with decreasing photon frequency and increasing temperature for photons polarized parallel to the layer plane, while for photons polarized perpendicular to the layer plane the alpha temperature-dependence is more complicated. (ii) If the piezoelectric scattering is dominant, alpha is also decreasing with increasing the film thickness for photons polarized parallel or perpendicular to the layer plane. But alpha decreases with increasing temperature for photons polarized perpendicular to the layer plane. Moreover, numerical results for the parallel polarization are much smaller than those for the perpendicular polarization.Item type:Item, ENERGY-BANDS AND ELECTRON-DENSITY IN BISMUTH WITH A UNIFORM DC MAGNETIC-FIELD(1984) ;CHEN, MH ;WU, CC ;LIN, CJ ;應用數學系電控工程研究所Item type:Item, EVAPORATED COPT ALLOY-FILMS WITH STRONG PERPENDICULAR MAGNETIC-ANISOTROPY(1993-05-15) ;LIN, CJ ;GORMAN, GL ;光電工程學系Department of PhotonicsItem type:Item, FREE-CARRIER ABSORPTION IN N-TYPE GALLIUM-ARSENIDE IN QUANTIZING MAGNETIC-FIELDS(1991-03-15) ;WU, CC ;TSAI, J ;LIN, CJ ;應用數學系電子工程學系及電子研究所Free-carrier absorption in n-type GaAs in quantizing magnetic fields has been investigated quantum mechanically. It is assumed that the energy gand of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is acoustic-phonon scattering via deformation-potential coupling. When the radiation field is polarized parallel to the magnetic field, the free-carrier absorption coefficient assumes a complex value due to the ac radiation and phonon fields. Our results show that the real part of the absorption coefficient and the imaginary part of the absorption coefficient oscillate with the magnetic field. However, at very low temperatures, oscillations in the imaginary part are diminished and its value decreases rapidly with increasing magnetic field.Item type:Item, FREE-CARRIER ABSORPTION IN N-TYPE PIEZOELECTRIC SEMICONDUCTOR-FILMS(1994-11-14) ;WU, CC ;LIN, CJ ;應用數學系 ;電控工程研究所Department of Applied MathematicsFree-carrier absorption in n-type GaAs films has been investigated for the case where the free carriers are confined in a quasi-two-dimensional semiconducting structure with a non-parabolic energy band of electrons. It is assumed that the carriers in semiconductors are scattered by acoustic phonons via firstly the deformation-potential coupling and secondly the piezoelectric coupling. Results show that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the direction normal to the quasi-two-dimensional structure, the film thickness, the photon frequency and the temperature of the semiconductors. The free-carrier absorption coefficient could be complex owing to the interaction of photons, phonons and conduction electrons in piezoelectric semiconductors. Firstly, when the deformation-potential coupling is dominant, the absorption coefficient increases with decreasing photon frequency and increasing temperature for the radiation field,polarized parallel and perpendicular to the layer plane. It is also shown that the absorption coefficient increases with decreasing film thickness. Secondly, when the piezoelectric scattering is dominant, the absorption coefficient increases with decreasing photon frequency and decreasing film thickness for the radiation field polarized parallel and perpendicular to the layer plane. However, the absorption coefficient increases with increasing temperature for the radiation field polarized parallel to the layer plane while, for the radiation field polarized perpendicular to the layer plane, the absorption coefficient increases with decreasing temperature.Item type:Item, FREE-CARRIER ABSORPTION OF NONDEGENERATE SEMICONDUCTORS IN QUANTIZING MAGNETIC-FIELDS - NONPOLAR OPTICAL PHONON-SCATTERING(1993-06-15) ;WU, CC ;LIN, CJ ;應用數學系 ;電控工程研究所Department of Applied MathematicsThe effect of nonpolar optical phonon scattering on the free-carrier absorption in n-type semiconductors such as germanium has been investigated quantum mechanically in quantizing magnetic fields. It is assumed that the energy band structure of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for conduction electrons is of the nonpolar optical phonon scattering. When the radiation is polarized parallel to a dc magnetic field B, the absorption coefficient appears to be of a complex value due to the interaction between the radiation field and the optical phonon field in nondegenerate semiconductors. Results show that the real part of the absorption coefficient oscillates with the magnetic field in the high-field region, and imaginary part of the absorption coefficient appears with a few extremum points (peaks and dips) in high magnetic fields. These are different from those of the acoustic phonon scattering in III-V compound semiconductors such as InSb or GaAs, in which the absorption coefficient oscillates with the magnetic field in lower magnetic fields and then increases monotonically with the field.Item type:Item, FUZZY ADAPTIVE LEARNING CONTROL NETWORK WITH ONLINE NEURAL LEARNING(1995-04-14) ;LIN, CT ;LIN, CJ ;LEE, CSG ;電控工程研究所Institute of Electrical and Control EngineeringThis paper addresses the structure and the associated on-line learning algorithms of a feedforward multilayered connectionist network for realizing the basic elements and functions of a traditional fuzzy logic controller. The proposed Fuzzy Adaptive Learning COntrol Network (FALCON) can be contrasted with the traditional fuzzy logic control systems in their network structure and learning ability. The connectionist structure of the proposed FALCON can be constructed from training examples by neural learning techniques to find proper fuzzy partitions, membership functions, and fuzzy logic rules. Two complementary on-line structure/parameter learning algorithms, FALCON-FSM and FALCON-ART, are proposed for constructing the FALCON dynamically. The FALCON-FSM combines the backpropagation learning scheme for parameter learning and a fuzzy similarity measure for structure learning. The FALCON-FSM can find proper fuzzy logic rules, membership functions, and the size of output partitions simultaneously. In the FALCON-FSM algorithm, the input and output spaces are partitioned into ''grids''. The grid-typed space partitioning certainly makes both the fuzzy logic controller software emulation and fuzzy chip implementation convenient. However, as the number of input/output variables increases, the number of partitioned grids will grow combinatorially. To avoid the problem of combinatorial growth of partitioned grids in some complex systems, the FALCON-ART algorithm is developed, which can partition the input and output spaces in a more flexible way based on the distribution of the training data. The FALCON-ART combines the backpropagation learning scheme for parameter learning and a fuzzy ART algorithm for structure learning. The FALCON-ART can on-line partition the input and output spaces, tune membership functions and find proper fuzzy logic rules dynamically. Computer simulations were conducted to illustrate the performance and applicability of both FALCON-FSM and FALCON-ART learning algorithms.