EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN DEGENERATE N-TYPE INDIUM-ANTIMONIDE IN QUANTIZING MAGNETIC-FIELDS

Abstract

Free-carrier absorption in degenerate semiconductors such as n-type InSb has been investigated in quantizing magnetic fields at a very low temperature limit. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is the acoustic phonon scattering via the deformation potential coupling. Numerical results show that both real and imaginary parts of the absorption coefficient in degenerate semiconductors oscillate quite considerably with the magnetic field from the lower-field up to a higher-field region and some discontinuous points can be observed there. This is different from the numerical results shown in nondegenerate semiconductors.