標題: EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN DEGENERATE N-TYPE INDIUM-ANTIMONIDE IN QUANTIZING MAGNETIC-FIELDS
作者: WU, CC
TSAI, JS
LIN, CJ
應用數學系
電控工程研究所
Department of Applied Mathematics
Institute of Electrical and Control Engineering
公開日期: 1-一月-1992
摘要: Free-carrier absorption in degenerate semiconductors such as n-type InSb has been investigated in quantizing magnetic fields at a very low temperature limit. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is the acoustic phonon scattering via the deformation potential coupling. Numerical results show that both real and imaginary parts of the absorption coefficient in degenerate semiconductors oscillate quite considerably with the magnetic field from the lower-field up to a higher-field region and some discontinuous points can be observed there. This is different from the numerical results shown in nondegenerate semiconductors.
URI: http://hdl.handle.net/11536/3593
ISSN: 0921-4526
期刊: PHYSICA B
Volume: 176
Issue: 1-2
起始頁: 159
結束頁: 164
顯示於類別:期刊論文