Browsing by Author "LIN, GR"
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Item type:Item, ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT(1994-12-19) ;LIN, GR ;CHEN, WC ;CHANG, CS ;PAN, CL光電工程學系Item type:Item, ELECTROOPTIC PHASE TRACKING OF MICROWAVE SIGNALS BEYOND 18.5 GHZ USING AN INTEGRATED ELECTROOPTIC MODULATOR AS AN OPTOELECTRONIC HARMONIC MIXER IN A PHASE-LOCK LOOP(1994-04-01) ;PAN, CL ;LIN, GR ;CHYOU, DY ;WU, HH交大名義發表We demonstrate electrooptic phase tracking of microwave signals beyond 18.5 GHz using a gain-switched laser diode as the optical clock. The key element of this system is a fiber-pigtailed integrated-optic Mach-Zehnder Modulator (IOM). The IOM functions as an optoelectronic harmonic mixer in a phase lock loop. The conversion loss of the OEHM is 66dB. The phase error and the single sideband phase noise density of the phase- locked 18.5 GHz signal is 5.6 x 10(-5) rad/square-root Hzand -54 dBc/Hz, respectively.Item type:Item, LASER-DIODE-BASED OPTOELECTRONIC SUBHARMONIC PHASE-LOCKED LOOP(1995-10-01) ;LIN, GR ;YANG, CR ;PAN, CL ;交大名義發表光電工程學系An optoelectronic technique for synthesis of frequency-versatile electrical signals phase-locked to the optical clock is proposed. The key component is an integrated-optic modulator (IOM) operated in the nonlinear regime. With a photodetctor, the IOM functions as an optoelectronic subharmonic mixer for intermixing microwave signals that are subharmonics of the optical clock, As a first demonstration, phase-locked subharmonics and fractional harmonics of the optical clock at f(o) = 500 MHz, with frequency equal to f(o)/n or (m/n)f(o), where n = 2,3,4... and m/n = 2/5,2/3,4/3,3/2 and 5/3 etc;, are generated and characterized.Item type:Item, OPTOELECTRONIC PHASE TRACKING AND ELECTROOPTIC SAMPLING OF FREE-RUNNING MICROWAVE SIGNALS UP TO 20 GHZ IN A LASER-DIODE-BASED SYSTEM(1995-06-01) ;WU, HH ;LIN, GR ;PAN, CL ;光電工程學系Department of PhotonicsWe report optoelectronic phase-tracking and electrooptic sampling of microwave signals from a free-running oscillator in a laser-diode-based system. A voltage-controlled oscillator (VCO) in a photoconductive harmonic mixer based phase-lock loop is utilized to gain switch a 0.8 mu m laser diode for phase-tracking of the microwave signal at frequencies up to 20 GHz. Phase and amplitude of the microwave signal in a microstrip Line is also measured using another 1,3-mu m laser diode driven by the VCO.Item type:Item, OPTOELECTRONIC PHASE-TRACKING AND WAVE-FORM DISPLAY OF MICROWAVE SIGNALS UP TO 8 GHZ USING GAIN-SWITCHED LASER-DIODES(1994-05-15) ;WU, HH ;WANG, CL ;LIN, GR ;CHANG, CSPAN, CLWe present a new, more versatile scheme for maintaining phase coherence between optical probe pulses and microwave signals under test in a laser-diode-based optoelectronic sampling system. This approach takes advantage of the relative ease of changing the repetition rate of the gain-switched laser diode (GSLD). The microwave signal to be sampled is used as the clock signal for phase-locking of a voltage controlled-oscillator (VCO) which drives the GSLD. Phase-tracking and display of waveforms at frequencies up to 8 GHz have been realized. It is also shown that lower phase noise sidebands for the phase-locked VCO can be realized by locking the higher harmonics of the laser pulse to the microwave clock.Item type:Item, SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS(1995-12-04) ;GANIKHANOV, F ;LIN, GR ;CHEN, WC ;CHANG, CSPAN, CLWe have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.