Browsing by Author "LIN, SS"

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ASYMPTOTIC-BEHAVIOR OF POSITIVE SOLUTIONS TO SEMILINEAR ELLIPTIC-EQUATIONS ON EXPANDING ANNULI
(1995-08-10)
LIN, SS
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交大名義發表
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應用數學系
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National Chiao Tung University
;
Department of Applied Mathematics
We study the asymptotic behavior of positive solutions of the semilinear elliptic equation Delta u + f(u) = 0 in Omega(a), u = 0 on partial derivative Omega(a), where Omega(a),= {x is an element of R(N): a < x < a + 1} are expanding annuli as a --> infinity, and Sis positive and superlinear at both 0 and infinity. We first show that there are a priori bounds for some positive solutions u(a)(x) as a --> infinity. Then, if we fu: any direction, after a suitable translation of u(a) the limiting solutions are non-negative solutions on the infinite strip. We can obtain more detailed descriptions of these limits if u(a) is radially symmetric, least-energy, or least-energy with a particular symmetry. (C) 1995 Academic Press, Inc.
COMPLETE FIRST-ORDER RAMAN-SPECTRA OF RUSE2
(1990)
HUANG, CR
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LEE, MC
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HUANG, YS
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LIN, SS
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DANN, TE
EFFECTS OF PLASMA TREATMENT ON THE PROPERTIES OF ROOM-TEMPERATURE LIQUID-PHASE DEPOSITED (LPD) OXIDE-FILMS
(1995-07-01)
YEH, CF
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LIN, SS
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Effects of plasma treatment including H-2 or O-2 On the properties of LPD oxide were investigated. After plasma treatment, the physicochemical characteristics of LPD oxide films were greatly improved. No matter whether with H-2 or O-2 plasma treatment, the LPD oxide film exhibited higher refractive index and lower P-etch rate than as-deposited films. The electrical characteristics were also improved. This indicates that plasma treatment can effectively passivate the vacancies in LPD oxide. It was also found that the treatment using O-2 source was better than using H-2. This was the same as for the case of thermal annealing. Because the plasma treated LPD oxide exhibited superior results to the thermally annealed one and the temperature in plasma treatment was much lower than that in thermal annealing, plasma treatment is more suitable for improving the characteristics of LPD oxide films.
EXISTENCE AND MULTIPLICITY OF POSITIVE RADIAL SOLUTIONS FOR SEMILINEAR ELLIPTIC-EQUATIONS IN ANNULAR DOMAINS
(1991-11-01)
LIN, SS
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PAI, FM
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應用數學系
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Department of Applied Mathematics
The existence and multiplicity of positive radial solutions of equation DELTA-u + f(u) = 0 is studied in annular domains in R(n), n greater-than-or-equal-to 2. It is proven that if f(0) greater-than-or-equal-to 0,f is somewhere negative in (0, infinity) and superlinear at infinity, then there is a large positive radial solutions on all annuli. If f(0) < 0 and satisfies certain conditions, then the equation has no solution if the annuli are too wide. Multiplicity results are also obtained when f has many humps with positive areas.
EXISTENCE AND MULTIPLICITY OF POSITIVE RADIAL SOLUTIONS FOR SEMILINEAR ELLIPTIC-EQUATIONS IN ANNULAR DOMAINS
(1991-11-01)
LIN, SS
;
PAI, FM
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
The existence and multiplicity of positive radial solutions of equation DELTA-u + f(u) = 0 is studied in annular domains in R(n), n greater-than-or-equal-to 2. It is proven that if f(0) greater-than-or-equal-to 0,f is somewhere negative in (0, infinity) and superlinear at infinity, then there is a large positive radial solutions on all annuli. If f(0) < 0 and satisfies certain conditions, then the equation has no solution if the annuli are too wide. Multiplicity results are also obtained when f has many humps with positive areas.
EXISTENCE AND NONEXISTENCE OF STEADY-STATE SOLUTIONS FOR A SELECTION-MIGRATION MODEL IN POPULATION-GENETICS
(1989)
BROWN, KJ
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LIN, SS
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TERTIKAS, A
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應用數學系
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Department of Applied Mathematics
EXISTENCE OF MANY POSITIVE NONRADIAL SOLUTIONS FOR NONLINEAR ELLIPTIC-EQUATIONS ON AN ANNULUS
(1993-06-01)
LIN, SS
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交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
EXISTENCE OF POSITIVE NONRADIAL SOLUTIONS FOR NONLINEAR ELLIPTIC-EQUATIONS IN ANNULAR DOMAINS
(1992-08-01)
LIN, SS
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交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
We study the existence of positive nonradial solutions of equation DELTA-u + f(u) = 0 in OMEGA(a) , u = 0 on partial derivative-OMEGA(a) , where OMEGA(a) = {x is-an-element-of R(n) : a < x < 1} is an annulus in R(n) , n greater-than-or-equal-to 2 , and f is positive and superlinear at both 0 and infinity . We use a bifurcation method to show that there is a nonradial bifurcation with mode k at a(k) is-an-element-of (0, 1) for any positive integer k if f is subcritical and for large k if f is supercritical. When f is subcritical, then a Nehari-type variational method can be used to prove that there exists a* is-an-element-of (0, 1) such that for any a is-an-element-of (a* , 1) , the equation has a nonradial solution on OMEGA(a) .
FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE
(1995-06-01)
YEH, CF
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LIN, SS
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HONG, TY
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交大名義發表
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電子工程學系及電子研究所
Low-temperature, high quality liquid-phase deposition (LPD) oxide was developed. The MOSFETs with such a new LPD oxide as gate insulators were investigated. The electrical characteristics, including threshold voltage of 2.1 Volts, peak effective mobility (mu(FE)) Of 580 cm(2)/V . s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD oxide can be an suitable candidate for future gate insulators in low-temperature processed MOSFETs.
INVESTIGATION OF THERMAL COEFFICIENT FOR POLYCRYSTALLINE SILICON THERMAL SENSOR DIODE
(1992-02-01)
YEH, CF
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LIN, SS
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YANG, GP
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交大名義發表
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電控工程研究所
Thermal sensors utilizing p-n junction diodes built into the polycrystalline silicon layer are developed. The effective factors influencing the thermal coefficient of polycrystalline silicon thermal sensor diodes are clarified. It is found that diodes with a light boron dose have a larger thermal coefficient than those with a heavy boron dose. The plural p-n diodes connected with more cascade series number have a larger thermal coefficient than ones with less cascade series number. The periphery of the thermal sensor seems to have little effect on the thermal coefficient. In addition, the thermal coefficient will become higher as a larger forward current is selected. The thermal coefficient of the sensor with a boron dose of 1 x 10(15) cm-2 will reach a saturation value of -2 mV/K when the forward current is above 2-mu-A.
LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR
(1995-07-01)
YEH, CF
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LIN, SS
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HONG, TY
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Device performances of MOSFET's with SiO2-xFx gate oxides prepared by an extremely low-temperature (15 degrees C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (mu(eff)) of 525 cm(2)V . s, and subthreshold suing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFET's. This demonstrates that LPD SiO2-xFx can be a suitable candidate for future gate insulators in low-temperature processed MOSFET's.
LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
(1994-04-01)
YEH, CF
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CHEN, CL
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YANG, YC
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LIN, SS
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YANG, TZ
Poly-Si thin-film transistor (TFT) devices using solid-phase-crystallized and liquid-phase-deposited gate oxide are, for the first time, realized by low-temperature processes (LTP) (<625-degrees-C) for future LCDs and 3-D integrated circuits. The method of liquid-phase deposition of SiO2 (LPD-SiO2) is described. The physical, chemical and electrical properties of the new dielectric layer are clarified. The TFT (W/L = 200 mum/10 mum) having an on-off current ratio of 10(6) at V(D) = 5 V, a field-effect mobility of 15 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 5.6 V, and a subthreshold swing of 1.6 V/decade, exhibits sufficient performance for pixel transistors. The field-effect mobility is strongly dependent on channel length. Effective passivation of defects by plasma hydrogenation will be very essential to achieve higher performance.
MONOTONE TECHNIQUES AND SOME EXISTENCE-UNIQUENESS THEOREMS FOR 2 POINT BOUNDARY-VALUE-PROBLEMS
(1982)
LIN, SS
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交大名義發表
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應用數學系
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National Chiao Tung University
;
Department of Applied Mathematics
NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
(1993-08-01)
YEH, CF
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LIN, SS
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CHEN, CL
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YANG, YC
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電控工程研究所
A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).
ON NON-RADIALLY SYMMETRIC BIFURCATION IN THE ANNULUS
(1989-08-01)
LIN, SS
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交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
ON THE EXISTENCE OF POSITIVE RADIAL SOLUTIONS FOR NONLINEAR ELLIPTIC-EQUATIONS IN ANNULAR DOMAINS
(1989-10-01)
LIN, SS
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
ON THE NUMBER OF POSITIVE SOLUTIONS FOR NONLINEAR ELLIPTIC-EQUATIONS WHEN A PARAMETER IS LARGE
(1991-02-01)
LIN, SS
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交大名義發表
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應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
ON THE POSITIVE SOLUTIONS FOR SEMILINEAR ELLIPTIC-EQUATIONS ON ANNULAR DOMAIN WITH NONHOMOGENEOUS DIRICHLET BOUNDARY-CONDITION
(1994-01-15)
LEE, MG
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LIN, SS
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交大名義發表
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應用數學系
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National Chiao Tung University
PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR
(1994-02-01)
YEH, CF
;
LIN, SS
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YANG, TZ
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CHEN, CL
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YANG, YC
Polysilicon thin-film transistors (poly-Si TFT's) with liquid phase deposition (LPD) silicon dioxide (SiO2) gate insulator were realized by low-temperature processes (< 620-degrees-C). The physical, chemical, and electrical properties of the new dielectric layer were clarified. The low-temperature processed (LTP) polylayer TFT's with W/L = 200 mum/10 mum had an on-off current ratio of 4.95 x 10(6) at V(D) = 5 V, a field effect mobility of 25.5 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 6.9 V. and a subthreshold swing of 1.28 V/decade at V(D) = 0.1 V. Effective passivation of defects by plasma hydrogenation can improve the characteristics of the devices. The off-state current (I(L)) mechanisms of the tTP poly-Si TFT's were systematically compared and clarified. The I(L) is divided into three regions; the I(L) is attributable to a resistive current in region I (low gate bias), to pure thermal generation current in region II (low drain bias), and to Frenkel-Poole emission current in region III (high gate bias and drain bias).
POSITIVE RADIAL SOLUTIONS AND NONRADIAL BIFURCATION FOR SEMILINEAR ELLIPTIC-EQUATIONS IN ANNULAR DOMAINS
(1990-08-01)
LIN, SS
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics