NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT

Abstract

A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).