NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT

標題:	NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
作者:	YEH, CF LIN, SS CHEN, CL YANG, YC 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	1-八月-1993
摘要:	A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).
URI:	http://dx.doi.org/10.1109/55.225593 http://hdl.handle.net/11536/2923
ISSN:	0741-3106
DOI:	10.1109/55.225593
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	14
Issue:	8
起始頁:	403
結束頁:	405
顯示於類別：	期刊論文

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