標題: | A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition |
作者: | Shih, PS Chang, CY Chang, TC Huang, TY Peng, DZ Yeh, CF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-八月-1999 |
摘要: | We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's), The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23 degrees C, Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication. |
URI: | http://dx.doi.org/10.1109/55.778164 http://hdl.handle.net/11536/31174 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.778164 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 20 |
Issue: | 8 |
起始頁: | 421 |
結束頁: | 423 |
顯示於類別: | 期刊論文 |