標題: A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
作者: Shih, PS
Chang, CY
Chang, TC
Huang, TY
Peng, DZ
Yeh, CF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1999
摘要: We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's), The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23 degrees C, Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication.
URI: http://dx.doi.org/10.1109/55.778164
http://hdl.handle.net/11536/31174
ISSN: 0741-3106
DOI: 10.1109/55.778164
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 20
Issue: 8
起始頁: 421
結束頁: 423
顯示於類別:期刊論文


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