NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
| dc.citation.epage | 405 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 403 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.citation.woscount | 26 | |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | LIN, SS | en_US |
| dc.contributor.author | CHEN, CL | en_US |
| dc.contributor.author | YANG, YC | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:25Z | |
| dc.date.available | 2014-12-08T15:04:25Z | |
| dc.date.issued | 1993-08-01 | en_US |
| dc.description.abstract | A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD). | en_US |
| dc.identifier.doi | 10.1109/55.225593 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.225593 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2923 | |
| dc.identifier.wosnumber | WOS:A1993LQ00900012 | |
| dc.language.iso | en_US | en_US |
| dc.title | NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT | en_US |
| dc.type | Article | en_US |