Browsing by Author "LIN, TY"

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A CONGESTION CONTROL APPROACH FOR LAN MAN INTERCONNECTION VIA ATM
(1994)
LIN, TY
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CHEN, YC
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資訊工程學系
;
Department of Computer Science
CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS
(1995-05-08)
KAO, MJ
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HSU, WC
;
HSU, RT
;
WU, YH
;
LIN, TY
EFFECTS OF HYDROGENATION ON ELECTRICAL-PROPERTIES OF INP GROWN ON GAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM
(1993-01-01)
LIN, TY
;
CHEN, YF
;
CHEN, WK
;
LUE, YS
;
電子物理學系
Effects of hydrogenation on electrical properties of InP epilayers grown on GaAs substrates by 'photochemical vapor deposition' have been investigated. The electrical properties were characterized by current-voltage and capacitance-voltage measurements at room temperature. Deep level transient spectroscopy technique was used as an auxiliary method to detect the deep level traps. Hydrogen plasma exposure at 250-degrees-C for 3 h increased the reverse breakdown voltage by a factor of about 1.7 and the Schottky barrier height by 0.05 eV. In addition, the shallow and deep levels were substantially passivated. These results indicate that hydrogenation by the photochemical vapor deposition system for InP on GaAs is an excellent method to improve its device application.
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
(1993-03-01)
WU, SL
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LIN, TY
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LEE, CL
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LEI, TF
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電子工程學系及電子研究所
A low-temperature wafer loading and N2 preannealing process is used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased.
FABRICATION AND ELECTRICAL BEHAVIOR OF SOL-PRECIPITATE LINBO3 CERAMICS WITH THE ADDITION OF (LIF + MGF2)
(1990-02-01)
CHIOU, BS
;
LIN, TY
;
DUH, JG
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電控工程研究所
;
Institute of Electrical and Control Engineering
SINTERING BEHAVIOR AND DIELECTRIC CHARACTERISTICS OF LITAO3 WITH THE ADDITION OF (MG2+TIO2)
(1991-05-01)
CHIOU, BS
;
LIN, TY
;
DUH, JG
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Densified LiTaO3-type ceramics can be obtained by sintering at 900-degrees-C after the addition of MgF2 or (MgF2 + LiF) mixture. Partial hydrolysis of MgF2 produces an MgO layer on top of the sample. Space charge polarization occurs at high temperatures between the MgO layer and the LiTaO3 matrix, inducing a large dielectric constant predominating over the ferroelectric Curie peak of the sample. The TiO2 dopant lowers the Curie temperature of the sample as the cation concentration increases. In addition, it is observed that substitution of Ta ions with Mg ions results in the formation of Ta2O5.
THE OCCURRENCE OF SUPERCONDUCTIVITY IN THE TLBA2CUO5-DELTA-TYPE-(1021) SYSTEM
(1989-06-01)
KU, HC
;
TAI, MF
;
SHI, JB
;
SHIEH, MJ
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HSU, SW