ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS

Abstract

A low-temperature wafer loading and N2 preannealing process is used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased.