| 標題: | ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS |
| 作者: | WU, SL LIN, TY LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Mar-1993 |
| 摘要: | A low-temperature wafer loading and N2 preannealing process is used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased. |
| URI: | http://dx.doi.org/10.1109/55.215128 http://hdl.handle.net/11536/3110 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/55.215128 |
| 期刊: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 14 |
| Issue: | 3 |
| 起始頁: | 113 |
| 結束頁: | 114 |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon / Wu, SL;Chen, CY;Lin, TY;Lee, CL;Lei, TF
- CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION / WU, SL;LEE, CL;LEI, TF;LIANG, MS
- THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS / WU, SL;LEE, CL;LEI, TF
- TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS) / WU, SL;LEE, CL;LEI, TF
Loading...