Browsing by Author "LIN, WJ"

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GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION
(1995-06-15)
LIN, WJ
;
TSENG, TY
;
LU, HB
;
TU, SL
;
YANG, SJ
GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
(1995-05-15)
LIN, WJ
;
TSENG, TY
;
LIN, SP
;
TU, SL
;
YANG, SJ
Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [001]YBa2Cu3O7-x (YBCO) as the base electrode. The theta-2 theta scan and phi-scan X-ray diffraction suggest that [210](SBN)//[100](YBCO)//[110]CeO2//[110](si). The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P-r) and coercive field (E(c)) are, respectively, P-r = 27.2 mu C/cm(2) and E(c) = 24.8 kV/cm.
REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE
(1993-01-01)
LAN, WH
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LIN, WJ
;
TU, SL
;
YANG, SJ
;
HUANG, KF
The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
RECESSED-GATE ALGAAS/INGAAS/GAAS PSEUDORMORPHIC HEMT WITH SI-PLANAR-DOPED ETCH-STOP LAYER
(1995-03-30)
LAN, WH
;
LIN, WJ
;
PENG, CK
;
CHEN, SS
;
TU, SL
An improved slot etch technique based on an Si planar doped laver has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g(m) with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices.