GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS

Abstract

Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [001]YBa2Cu3O7-x (YBCO) as the base electrode. The theta-2 theta scan and phi-scan X-ray diffraction suggest that [210](SBN)//[100](YBCO)//[110]CeO2//[110](si). The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P-r) and coercive field (E(c)) are, respectively, P-r = 27.2 mu C/cm(2) and E(c) = 24.8 kV/cm.