GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
| dc.citation.epage | L627 | en_US |
| dc.citation.issue | 5B | en_US |
| dc.citation.spage | L625 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | LIN, WJ | en_US |
| dc.contributor.author | TSENG, TY | en_US |
| dc.contributor.author | LIN, SP | en_US |
| dc.contributor.author | TU, SL | en_US |
| dc.contributor.author | YANG, SJ | en_US |
| dc.contributor.author | HARN, JJ | en_US |
| dc.contributor.author | LIU, KS | en_US |
| dc.contributor.author | LIN, IN | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:03:23Z | |
| dc.date.available | 2014-12-08T15:03:23Z | |
| dc.date.issued | 1995-05-15 | en_US |
| dc.description.abstract | Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [001]YBa2Cu3O7-x (YBCO) as the base electrode. The theta-2 theta scan and phi-scan X-ray diffraction suggest that [210](SBN)//[100](YBCO)//[110]CeO2//[110](si). The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P-r) and coercive field (E(c)) are, respectively, P-r = 27.2 mu C/cm(2) and E(c) = 24.8 kV/cm. | en_US |
| dc.identifier.doi | 10.1143/JJAP.34.L625 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.34.L625 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1921 | |
| dc.identifier.wosnumber | WOS:A1995RD78900010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SBN | en_US |
| dc.subject | EPITAXIAL | en_US |
| dc.subject | FERROELECTRIC | en_US |
| dc.subject | HYSTERESIS | en_US |
| dc.subject | THIN FILMS | en_US |
| dc.title | GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS | en_US |
| dc.type | Article | en_US |