Browsing by Author "LIOU, BW"

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HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
(1995-10-26)
LIOU, BW
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
(1995-05-29)
LIOU, BW
;
WU, YH
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所