Browsing by Author "LUE, YS"

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EFFECT OF HYDROGENATION ON DEEP-LEVEL TRAPS IN INP ON GAAS
(1992-01-01)
CHEN, YF
;
SUNG, KC
;
CHEN, WK
;
LUE, YS
;
電子物理學系
Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10(15) cm-3 for samples with a carrier concentration of 10(16) cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 10(14) cm-3 and of the carrier concentration to 10(15) cm-3.
EFFECTS OF HYDROGENATION ON ELECTRICAL-PROPERTIES OF INP GROWN ON GAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM
(1993-01-01)
LIN, TY
;
CHEN, YF
;
CHEN, WK
;
LUE, YS
;
電子物理學系
Effects of hydrogenation on electrical properties of InP epilayers grown on GaAs substrates by 'photochemical vapor deposition' have been investigated. The electrical properties were characterized by current-voltage and capacitance-voltage measurements at room temperature. Deep level transient spectroscopy technique was used as an auxiliary method to detect the deep level traps. Hydrogen plasma exposure at 250-degrees-C for 3 h increased the reverse breakdown voltage by a factor of about 1.7 and the Schottky barrier height by 0.05 eV. In addition, the shallow and deep levels were substantially passivated. These results indicate that hydrogenation by the photochemical vapor deposition system for InP on GaAs is an excellent method to improve its device application.