Browsing by Author "Lai, Ming-Hui"

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Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
(2012-01-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for active-matrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability. (C) 2012 The Japan Society of Applied Physics
Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
(2012-01-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for active-matrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability. (C) 2012 The Japan Society of Applied Physics
Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors
(2013-10-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Most studies have focused only on reducing Ni contamination because Ni residues cause high leakage current in MIC-TFTs. Also of concern is the source/drain (S/D) series resistance, which degrades the device performance (driving ability) that might vary with the Ni concentration in MIC-TFTs. Improving the driving ability of MIC-TFTs requires a detailed understanding of how Ni residues affect S/D series resistance. This study investigates how Ni concentration affects S/D series resistance by using the transmission line method. The results of this study provide further insight into how Ni concentration and resistance are related. The results show that the S/D series resistance and channel resistance decreased with a reduction in Ni concentration in MIC poly-Si because of better crystalline quality and lower degradation of the donor concentration. This phenomenon was caused by the Ni concentration forming less NiSi2 nucleation sites to generate a large grain size; Ni atoms serve as acceptor-like dopants in silicon, which counteract with the effects of n-type doping, subsequently reducing the donor concentration in the S/D region. (C) 2013 Elsevier B. V. All rights reserved.
Electrical performance and thermal stability of MIC poly-Si TFTs improved using drive-in nickel induced crystallization
(2011-03-15)
Lai, Ming-Hui
;
Wu, Yew Chung Sermon
;
Chang, Chih-Pang
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi(2) precipitates, which degrade the device performance. In this study, a new manufacturing method for poly-Si TFTs using drive-in Ni induced crystallization (DIC) was proposed. In DIC, F(+) implantation was used to drive Ni in the alpha-Si layer. It was found that the electrical performance (especially leakage current) and thermal stability of DIC-TFTs were improved due to the reduction of Ni concentration and passivation of trap states near the SiO(2)/poly-Si interface. (C) 2010 Elsevier B.V. All rights reserved.
Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer
(2011-06-01)
Lai, Ming-Hui
;
Wu, Yewchung Sermon
;
Chang, Chih-Pang
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC-TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC-TFTs, the on/off current ratio (I (on)/I (off)) of DICC-TFTs was increased by a factor of 9.7 from 9.21 x 10(4) to 8.94 x 10(5). The leakage current (I (off)) of DICC-TFTs was 4.06 pA/mu m, which was much lower than that of the MIC-TFTs (19.20 pA/mu m). DICC-TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability.
Improved Performance of MIC Poly-Si TFTs Using Driven-in Nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation
(2010)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Tung, Teng-Fu
;
Wu, Hung-Yu
;
材料科學與工程學系
A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in alpha-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (N-t) compared with conventional MIC TFTs.
Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
(2011-10-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved. (C) 2011 Elsevier Ltd. All rights reserved.
Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer
(2010)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.