Improved Performance of MIC Poly-Si TFTs Using Driven-in Nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation

Abstract

A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in alpha-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (N-t) compared with conventional MIC TFTs.