Browsing by Author "Lai, T. Y."

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Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
;
Lee, C. H.
;
Tung, L. T.
;
Chiang, T. H.
;
Lai, T. Y.
Molecular beam epitaxy grown Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3))/In(0.20)Ga(0.80)As/GaAs has been rapidly thermal annealed to 850 degrees C in N(2). The hetero-structure remained intact, with the In(0.20)Ga(0.80)As/GaAs interface being free of misfit dislocation and In(0.20)Ga(0.80)As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga(2)O(3)(Gd(2)O(3)) as a dielectric with an in situ Al(2)O(3) capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
;
Lee, C. H.
;
Tung, L. T.
;
Chiang, T. H.
;
Lai, T. Y.
Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN
(2011-05-15)
Chang, W. H.
;
Chang, P.
;
Lee, W. C.
;
Lai, T. Y.
;
Kwo, J.
Nanometer-thick Y(2)O(3) films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y(2)O(3) exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y(2)O(3), stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y(2)O(3)/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y(2)O(3). (C) 2010 Elsevier B.V. All rights reserved.
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
(2011-05-15)
Chang, W. H.
;
Chang, P.
;
Lee, W. C.
;
Lai, T. Y.
;
Kwo, J.
Nanometer-thick Y2O3 films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y2O3 exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y2O3, stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y2O3/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y2O3. (C) 2010 Elsevier B.V. All rights reserved.
Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001)
(2010-12-01)
Chang, W. H.
;
Chang, P.
;
Lai, T. Y.
;
Lee, Y. J.
;
Kwo, J.
High-quality Gd(2)O(3) epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd(2)O(3) ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
(2010-12-01)
Chang, W. H.
;
Chang, P.
;
Lai, T. Y.
;
Lee, Y. J.
;
Kwo, J.
High-quality Gd2O3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd2O3 ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship