Browsing by Author "Lee, T. H."

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Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention
(2011-03-01)
Tsai, C. Y.
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Lee, T. H.
;
Chin, Albert
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電機工程學系
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Department of Electrical and Computer Engineering
We have fabricated the TaN-[SiO(2)-LaAlO(3)]-HfON-[LaAlO(3)-SiO(2)]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As(+) implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.
Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
(2010-11-22)
Tsai, C. Y.
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Lee, T. H.
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Cheng, C. H.
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Chin, Albert
;
Wang, Hong
We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890]
Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance
(2010)
Tsai, C. Y.
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Lee, T. H.
;
Chin, Albert
;
Wang, Hong
;
Cheng, C. H.
Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125 degrees C and excellent 10(6) endurance at a fast 100 mu s and +/- 16 V program/erase. This is achieved using an As(+)-implanted higher. trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125 degrees C.