Browsing by Author "Li, Ching-I"

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Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact
(2016)
Chen, Yi-Ju
;
Chou, Hung-Ju
;
Li, Ching-I
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.
Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction
(2017-09-01)
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
Chou, Hung-Ju
;
Li, Ching-I
;
Lin, Ger-Pin
Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n(+)/p junction are studied in this work. At an adequately high ion-implantation temperature (150 degrees C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting similar to 1 x 10(6) J(ON)/J(OFF) ratio is achieved.