Browsing by Author "Li, DU"

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10-Gb/s modulator drivers with local feedback networks
(2006-05-01)
Li, DU
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Tsai, CM
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
A novel intrinsic collector-base capacitance (C(CB)) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-mu m SiGe BiCMOS process could generate 9 V(PP) differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V(PP) in 0.18-mu m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers.
A 10-Gb/s laser diode driver in 0.35 mu m BiCMOS technology
(2005)
Wang, TY
;
Chen, WZ
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Tsai, CM
;
Huang, LR
;
Li, DU
This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35 mu m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps(p-p). The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 mu m(2).