Browsing by Author "Li, HY"

Now showing 1 - 2 of 2

La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide
(2003)
Huang, CH
;
Lin, CY
;
Li, HY
;
Chen, WJ
;
Chin, A
We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm(2)/V's in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm(2)/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/rectangle and small junction leakage currents of 3x10(-8) A/cm(2) and 2x10(-7) A/cm(2) for respective P+N and N+P junctions.
Optimized noise and consistent RF model for 0.18 mu m MOSFETs
(2003)
Huang, CH
;
Li, HY
;
Chin, A
;
Liang, V
;
Chien, SC
Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 mum MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number.