Browsing by Author "Liao, CP"

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Fabrication of very high resistivity Si with low loss and cross talk
(2000-09-01)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.
Isolation on Si wafers by MeV proton bombardment for RF integrated circuits
(2001-05-01)
Lee, LS
;
Liao, CP
;
Lee, CL
;
Huang, TH
;
Tang, DDL
This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors, Topics on two approaches, i.e., one using Al as the radiation mask and the other using proton direct-write on wafers were studied, It was shown that Al can effectively mask the proton bombardment of 15 MeV up to the fluence of 10(17) cm(-2). For the unmasking direct write of the proton bombardment, isolation in the silicon wafer can be achieved without damaging active devices if the proton fluence is kept below 1 x 10(14) cm-2 with the substrate resistivity level chosen at 140 Omega -cm, or kept at 1 x 10(15) cm(-2) with the substrate resistivity level chosen at 15 Omega -cm. Under the above approaches, the 1 h-200 degreesC thermal treatment, which is necessary for device final packaging, still gives enough high resistivity for the semi-insulating regions while recovers somewhat the active device characteristics, For the integrated passive inductor fabricated on the surface of the silicon wafer, the proton radiation improves its Q value.
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
(2000)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.