Browsing by Author "Lin, BC"

Now showing 1 - 20 of 21

Deuterium effect on stress-induced leakage current
(1999-04-01)
Lin, BC
;
Cheng, YC
;
Chin, A
;
Wang, T
;
Tsai, C
We have studied and compared stress-induced leakage current in oxides subjected to H-2 and D-2 annealing. There is not much difference in stress-induced leakage current between thick 70-Angstrom-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Angstrom-thick oxides annealed in D-2 ambient compared to that annealed in H-2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.
Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate
(1996-07-01)
Chin, A
;
Lin, HY
;
Lin, BC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have studied the optical and electrical properties of InGaAlP/InGaP PIN heterostructures by the effects of post-growth annealing, substrate misorientation and growth temperature. For the as-grown p-type In-0.5(Ga0.5Al0.5)(0.5)P, the 15 degrees misoriented sample shows the largest hole concentration of 1 x 10(18) cm(-3) as compared to 20 and 10 degrees misoriented samples. After annealing at 900 degrees C for 30 s, the hole concentration increases about three times to 2.6 x 10(18) cm(-3). The increased hole concentration is related to the four times enhanced photoluminescence (PL) intensity. In the In0.6Ga0.4P/In-0.5(Ga0.6Al0.4)(0.5)P stained multiple quantum wells, the post-growth annealing also improves the PL integrated intensity. The PL intensity on an as-grown sample decreases with the increased degree of misorientation, while the PL peak energy increases with the increased degree of misorientation, from 0 degrees, 2 degrees, 10 degrees toward 15 degrees. The PL intensities are larger for samples grown at 760 degrees C than those grown at 700 degrees C. Copyright (C) 1996 Elsevier Science Ltd.
Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate
(1996-07-01)
Chin, A
;
Lin, HY
;
Lin, BC
;
交大名義發表
;
電子工程學系及電子研究所
We have studied the optical and electrical properties of InGaAlP/InGaP PIN heterostructures by the effects of post-growth annealing, substrate misorientation and growth temperature. For the as-grown p-type In-0.5(Ga0.5Al0.5)(0.5)P, the 15 degrees misoriented sample shows the largest hole concentration of 1 x 10(18) cm(-3) as compared to 20 and 10 degrees misoriented samples. After annealing at 900 degrees C for 30 s, the hole concentration increases about three times to 2.6 x 10(18) cm(-3). The increased hole concentration is related to the four times enhanced photoluminescence (PL) intensity. In the In0.6Ga0.4P/In-0.5(Ga0.6Al0.4)(0.5)P stained multiple quantum wells, the post-growth annealing also improves the PL integrated intensity. The PL intensity on an as-grown sample decreases with the increased degree of misorientation, while the PL peak energy increases with the increased degree of misorientation, from 0 degrees, 2 degrees, 10 degrees toward 15 degrees. The PL intensities are larger for samples grown at 760 degrees C than those grown at 700 degrees C. Copyright (C) 1996 Elsevier Science Ltd.
High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wells
(1996-05-06)
Chin, A
;
Lin, BC
;
交大名義發表
;
電子工程學系及電子研究所
;
National Chiao Tung University
We have investigated the growth of high quality In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.25Ga0.75As multiple quantum wells (MQWs) on 1 degrees misoriented (111)B and (100)GaAs substrates. Very narrow photoluminescence (PL) linewidths of 6.6 and 5.6 meV were measured in (100) and (111)B In0.12Ga0.88As/GaAs MQWs, respectively, which indicates the good optical quality of materials. In addition, more than an order of magnitude enhancement of PL intensity was measured from the (111)B sample relative to that from (100), which is consistent with the previously reported strongly enhanced optical property in (111)B AlGaAs/GaAs QW to (100). In contrast, under our normal growth conditions, narrow PL linewidth and large PL intensity were difficult to achieve in (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs. Two-step growth with a high AlGaAs growth temperature was used to improve the optical quality of (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs. A narrow PL linewidth of 5.1 meV and four times enhanced PL intensity can be obtained by such two-step growth. Cross-sectional transmission electron microscopy indicates defects generated in the 550 degrees C grown (111)B In0.12Ga0.88As/Al0.25Ga0.75As MQWs, while such defects were reduced or disappeared at a high AlGaAs growth temperature of 620 degrees C. (C) 1996 American Institute of Physics.
High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C
(1996-09-09)
Chin, A
;
Lin, BC
;
Chen, WJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have designed a simple-hot wall low pressure chemical vapor deposition (LPCVD) system to grow high quality epitaxial Si films from 550 to 900 degrees C. The epitaxial film has been examined by scan electron microscopy for surface morphology, and by x-ray diffraction and cross-sectional transmission electron microscopy for crystallinity. Its quality has been found comparable to that of the substrate. Reduction of moisture and oxygen in the ambient is critical to the success of the growth at low temperatures. A combination of a leak-tight LPCVD reactor, a high flow rate Of 61/min of H-2 purge, and a pre-bake at high temperature of 950 degrees C has been used to achieve the reduction of moisture and oxygen. Degraded films form with increasing full width at half maximum of x-ray diffraction peak when a pre-bake at lower temperature is used. (C) 1996 American Institute of Physics.
High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C
(1996-09-09)
Chin, A
;
Lin, BC
;
Chen, WJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have designed a simple-hot wall low pressure chemical vapor deposition (LPCVD) system to grow high quality epitaxial Si films from 550 to 900 degrees C. The epitaxial film has been examined by scan electron microscopy for surface morphology, and by x-ray diffraction and cross-sectional transmission electron microscopy for crystallinity. Its quality has been found comparable to that of the substrate. Reduction of moisture and oxygen in the ambient is critical to the success of the growth at low temperatures. A combination of a leak-tight LPCVD reactor, a high flow rate Of 61/min of H-2 purge, and a pre-bake at high temperature of 950 degrees C has been used to achieve the reduction of moisture and oxygen. Degraded films form with increasing full width at half maximum of x-ray diffraction peak when a pre-bake at lower temperature is used. (C) 1996 American Institute of Physics.
Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface
(1998)
Cheng, YC
;
Chen, WJ
;
Lin, BC
;
Tsai, C
;
Chin, A
The device performance made by thin gate oxide is related to the oxide thickness uniformity and the interface smoothness. Unfortunately, native oxide roughens the initial surface before thermal oxidation. in this paper, we have designed a leak-tight low-pressure N2O oxidation system, and the native oxide is desorbed in-situ under H-2 environment, Atomically smooth oxide and Si interface of ultra-thill oxides (11-38 Angstrom) were achieved as observed by high-resolutional TEM. Significant mobility enhancement over large gate field is obtained by reducing interface roughness scattering. The oxide reliability is also improved by this smoother interface between Si and oxide.
Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growth
(1996)
Chin, A
;
Lin, BC
;
Gu, GL
;
Hsieh, KY
;
Jou, MJ
Long range alloy ordering is observed by cross-sectional TEM in both (111)A and (111)B AlGaAs. We have measured a 31 meV photoluminescence (PL) peak energy red shift of (111)A and (111)B Al0.30Ga0.70As to that of (100), while the PL integrated intensity in (111)A and (111)B is near an order of magnitude larger than that of (100). The ordering effect is reduced at a high growth temperature of 700 degrees C and the best PL linewidth of 17 and 3 meV are obtained in (111)A Al0.40Ga0.60As and (111)B Al0.30Ga0.70As, respectively. In the In0.6Ga0.4P/InGaAlP MQW, similar ordering related PL peak energy red shift of 37 meV and similar to 2 times enhanced PL integrated intensity are observed for 0 degrees sample to that of 15 degrees.
Optical and structural properties of spontaneously formed long-range compositional modulation in (111)A and (111)B AlGaAs
(1996-06-01)
Chin, A
;
Lin, BC
;
Gu, GL
;
Hsieh, KY
;
電子工程學系及電子研究所
We have studied the spontaneously formed long-range Al-rich and Ga-rich AlxGa1-xAs/AlyGa1-yAs superlattices in both (111)A and (111)B AlGaAs during epitaxial growth. The spontaneously formed compositional modulation has been investigated by cross-sectional transmission electron microscopy in AlxGa1-xAs (x=0.3-0.4) grown on (111)A and (111)B GaAs substrates at 600-700 degrees C. In contrast, similar superstructures are not observed in layers simultaneously grown on (100) substrates. The observed structural compositional modulation is closely related to the large peak energy redshift and peak intensity enhancement in 15 K photoluminescence (PL) of samples grown on both (111)A and (111)B orientations to those on (100). The respective redshifts of PL peak energy for (111)A and (111)B Al0.27Ga0.73As to that of (100) are 137 and 45 meV, while the PL integrated intensity enhancement to (100) amounts to 200 and 2000 times, respectively. The effect of compositional modulation is reduced with the increasing growth temperatures as shown in the considerably less compositionally modulated (111)A and (111)B Al0.40Ga0.60As grown at 700 degrees C. (C) 1996 American Institute of Physics.
Picosecond photoresponse of carriers in Si ion-implanted Si
(1996-07-29)
Chin, A
;
Lee, KY
;
Lin, BC
;
Horng, S
;
電子工程學系及電子研究所
Picosecond photoresponse of carriers in Si ion-implanted Si samples has been measured using femtosecond transient reflectivity measurement. A threshold peak implant dose of 10(16) cm(-2) is required to achieve picosecond carrier lifetime. At this dosage, carrier lifetimes of 0.9 and 1.4 ps are measured for the as-implanted and 400 degrees C annealed Si substrates, respectively. The increase in carrier lifetime upon annealing is attributed to the reduction in the concentration of trap and recombination centers. Sheet resistance also shows a strong dependence on the annealing temperature. An eightfold increase in sheet resistance is obtained for annealed samples, and a reduction in hopping conduction, manifested by the e(-1/T) temperature dependence, may be responsible for the increase in resistance. Further evidence of decreasing hopping conduction can be also observed from the more than two orders of magnitude in reduction of sheet resistance as the peak dosage decreases from 10(16) to 10(14) cm(-2). (C) 1996 American Institute of Physics.
Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment
(2005-05-01)
Lin, BC
;
Chang, KM
;
Lai, CH
;
Hsieh, KY
;
Yao, JM
Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O(2) and N(2)O. It is clear that the N(2)O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.
Reoxidation behavior of high-nitrogen oxynitride films after O-2 and N2O treatment
(2005-05-01)
Lin, BC
;
Chang, KM
;
Lai, CH
;
Hsieh, KY
;
Yao, JM
Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O-2 and N2O. It is clear that the N2O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.
Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2
(2006-06-01)
Lai, CH
;
Lin, BC
;
Chang, KM
;
Hsieh, KY
;
Lai, YL
We have proposed an approach for growing robust ultrathin oxynitride using conventional thermal processes with the capability of preventing boron penetration. In this method, we obtain oxynitride with high nitrogen concentration (approximate to 13 at. %) on the top and low interface state density (D-it = 2 x 10(10) cm(-2) eV(-1)). The films demonstrate excellent properties in terms of low Dit, low leakage current, high endurance in stressing and superior boron diffusion blocking behavior. This method does not involve any additional capital equipment [such as decoupled plasma nitridation (DPN) or remote plasma nitridation (RPN)] or gas (NO or N2O). In addition, it obtains high-quality oxynitride film with low thermal budget. Most importantly, this process is simple and fully compatible with current process technology. It would be important and interesting for process engineers engaged in the field of gate dielectrics. It is suitable for the next generation of ULSI technology.
The effect of native oxide on thin gate oxide integrity
(1998-11-01)
Chin, A
;
Lin, BC
;
Chen, WJ
;
Lin, YB
;
Thai, C
We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.
The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption
(1999-06-01)
Lai, JM
;
Chieng, WH
;
Lin, BC
;
Chin, A
;
Tsai, C
An intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents. (C) 1999 The Electrochemical Society. All rights reserved.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
Ultra-thin oxide with atomically smooth interfaces
(1995)
Chin, A
;
Chen, WJ
;
Kao, RH
;
Lin, BC
;
Chang, T
Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q(BD), interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 Angstrom. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.
Ultrathin N2O-oxide with atomically flat interfaces
(1997-05-01)
Chin, A
;
Chen, WJ
;
Lin, BC
;
Kao, JH
;
Tsai, C
Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.
Ultrathin N2O-oxide with atomically flat interfaces
(1997-05-01)
Chin, A
;
Chen, WJ
;
Lin, BC
;
Kao, JH
;
Tsai, C
Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.