Browsing by Author "Lin, CK"

Now showing 1 - 16 of 16

10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
(2005)
Liao, YS
;
Lin, GR
;
Lin, CK
;
Chu, YS
;
Kuo, HC
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PIND with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.
An NMR and XRD study of solidification/stabilization of chromium with portland cement and beta-C2S
(1996-06-01)
Lin, CK
;
Chen, JN
;
Lin, CC
;
環境工程研究所
;
材料科學與工程學系
Solidificalion/stabilization of chromium with Portland cement Type I and P-dicalcium silicate (beta-C2S) was investigated by means of the Si-29 solid stale Magic Angle Spinning/Nuclear Magnetic Resonance (Si-29 MAS/NMR) and X-ray Diffraction (XRD) techniques. It is found that chromium nitrate can increase the extent of beta-C2S hydration. It is also confirmed that the chromium ion is easily incorporated into the beta-C2S paste and hydrated Portland cement, and that it affects the characteristics of hydration and hydration products. Formation of beta-calcium chromium oxide hydrate (beta-CaCrO4 . 2H2(O)) during the hydration of chromium-doped beta-C2S and calcium chromium oxide hydrate (CaCrO4 . 2H(2)O) during the hydration of chromium-doped Portland cement indicates the substitution of chromium for silicon in hydration products. The chromium ion, Cr3+, is thus stabilized and solidified through this mechanism.
An NMR and XRD study of solidification/stabilization of chromium with portland cement and beta-C2S
(1996-06-01)
Lin, CK
;
Chen, JN
;
Lin, CC
;
環境工程研究所
;
材料科學與工程學系
Solidificalion/stabilization of chromium with Portland cement Type I and P-dicalcium silicate (beta-C2S) was investigated by means of the Si-29 solid stale Magic Angle Spinning/Nuclear Magnetic Resonance (Si-29 MAS/NMR) and X-ray Diffraction (XRD) techniques. It is found that chromium nitrate can increase the extent of beta-C2S hydration. It is also confirmed that the chromium ion is easily incorporated into the beta-C2S paste and hydrated Portland cement, and that it affects the characteristics of hydration and hydration products. Formation of beta-calcium chromium oxide hydrate (beta-CaCrO4 . 2H2(O)) during the hydration of chromium-doped beta-C2S and calcium chromium oxide hydrate (CaCrO4 . 2H(2)O) during the hydration of chromium-doped Portland cement indicates the substitution of chromium for silicon in hydration products. The chromium ion, Cr3+, is thus stabilized and solidified through this mechanism.
An NMR, XRD and EDS study of solidification/stabilization of chromium with portland cement and C3S
(1997-09-01)
Lin, CK
;
Chen, JN
;
Lin, CC
;
環境工程研究所
;
材料科學與工程學系
Solidification/stabilization (S/S) of chromium with Portland cement type I and tricalcium silicate (C3S) was investigated by using the Si-29 solid state magic angle spinning/nuclear magnetic resonance (Si-29 MAS/NMR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The present study confirms that chromium nitrate can increase the extent of C3S hydration. It also confirms that the chromium ion is easily incorporated into the C3S paste and hydrated Portland cement, and that it affects the characteristics of the hydration processes and their hydration products, The formation of calcium chromium silicate (CaCrSi4O10), calcium chromium oxide hydrate (CaCrO4 . 2H(2)O), and calcium dichromate (CaCr2O7) during the hydration of chromium-doped C3S indicates the probable substitution of chromium for silicon in the calcium silicate hydrate (C-S-H) and the interaction between Cr and Si. Furthermore, formation of CaCrSi4O10, aluminum chromium oxide hydroxide hydrate (Al(OH)CrO4 . H2O), aluminum chromium oxide hydroxide (Al-2(OH)(4)CrO4), and CaCr2O7 during the hydration of chromium-doped cement reveals not only the probable substitution of chromium for silicon in the calcium silicate hydrate (C-S-H) but also the interaction among Cr, Si and Al, Apparently, the chromium iron (Cr3+) may also be stabilized and solidified through these mechanisms in addition to those proposed by other investigators. (C) 1997 Elsevier Science B.V.
Constructing control process for wafer defects using data mining technique
(2004)
Tong, L
;
Lee, H
;
Huang, CF
;
Lin, CK
;
Yang, CH
The wafer defects influence the yield of a wafer. The integrated circuits (IC) manufacturers usually use a Poisson distribution based c-chart to monitor the lot-to-lot wafer defects. As the wafer size increases, defects on wafer tend to cluster. When the c-chart is used, the clustered defects frequently cause erroneous results. The main objective of this study is to develop a hierarchical adaptive control process to monitor the clustered defects effectively and detect the wafer-to-wafer variation and lot-to-lot variation simultaneously using data mining technique.
Defect-enhanced photoconductive response of silicon-implanted borosilicate glass
(2004-08-09)
Lin, GR
;
Lin, CJ
;
Lin, CK
;
光電工程學系
;
Department of Photonics
The E' (delta)-defect-enhanced photoconductivity of a metal-semiconductor-metal photodetector (MSM-PD) made on Si-implanted borosilicate glass (BSO:Si+) substrate is reported. The dark current of as-implanted BSO:Si+ MSM-PD is only 0.1 nA at bias of 70 V. The photocurrent of as-implanted BSO:Si+ MSM-PD illuminated at 488 nm is 0.91 nA, corresponding to photoconductive gain of 9.1 dB. The E' (delta)-defects luminescent at 520 nm are activated after 2 h annealing, which enhances the photocurrent of BSO:Si+ MSM-PD by one order of magnitude. Optimized responsivity, noise equivalent power, and detectivity of BSO:Si+ MSM-PD are 4.0 muA/W, 1.2x10(-9) W/Hz(1/2), and 3.5x10(5) cm Hz(1/2)/W, respectively. The electron paramagnetic resonance and etching-dependent photocurrent analysis corroborate the E' (delta)-defect-related photoconductivity of the BSO:Si+ glass. (C) 2004 American Institute of Physics.
Defect-enhanced photoconductive response of silicon-implanted borosilicate glass (vol 85, pg 935, 2004)
(2004-10-11)
Lin, GR
;
Lin, CJ
;
Lin, CK
;
光電工程學系
;
Department of Photonics
Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
(2005)
Lin, CK
;
Kuo, HC
;
Liao, YS
;
Lin, GR
;
光電工程學系
A novel top-illuminated metamorphic In(0.53)Ga(0.47)As p-i-n photodiodes (MM-PlNPD) grown on GaAs substrate by using a linearly graded In(x)Ga(1-x)P (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10(-11) W/Hz(1/2), and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.
Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2
(2005-05-01)
Lin, GR
;
Lin, CJ
;
Lin, CK
;
Chou, LJ
;
Chueh, YL
The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared electroluminescences (ELs) of Si-rich SiO2 films synthesized by Si-ion implantation and plasma-enhanced chemical-vapor deposition (PECVD) are investigated. The strong photoluminescence (PL) of Si-ion-implanted SiO2 (SiO2:Si+) at 415-455 nm contributed by weak-oxygen bond and neutral oxygen vacancy defects is observed after 1100 degrees C annealing for 180 min. The white-light EL of a reverse-biased SiO2:Si+ metal-oxide-semiconductor (MOS) diode with a turn-on voltage of 3.3 V originates from the minority-carrier tunneling and recombination in the defect states of SiO2:Si+, which exhibits maximum EL power of 120 nW at bias of 15 V with a power-current slope of 2.2 mu W/A. The precipitation of nanocrystallite silicon (nc-Si) in SiO2:Si+ is less pronounced due to relatively small excess Si density. In contrast, the 4-nm nc-Si contributed to PL and EL at about 760 nm is precipitated in the PECVD-grown Si-rich SiOx film after annealing at 1100 degrees C for 30 min. The indium-tin-oxide/Si-rich SiOx/p-Si/Al metal oxide semiconductor (MOS) diode is highly resistive with turn-on voltage and power-current (P-I) slope of 86 V and 0.7 mW/A, respectively. The decomposed EL peaks at 625 and 768 nm are contributed by the bias-dependent cold-carrier tunneling between the excited states in adjacent nc-Si quantum dots. (C) 2005 American Institute of Physics.
Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
(2006-02-01)
Lin, CJ
;
Lin, CK
;
Chang, CW
;
Chueh, YL
;
Kuo, HC
Near-infrared photolummescent dynamics of thermally annealed Si-rich SiOx, films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 mn since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometriC SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiOx samples corroborate well with the observed values and reveal a lifetime of 43 mu s under an optimized nc-Si precipitation condition of 1100 degrees C annealing for 3 h.
Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
(2005)
Lin, CK
;
Lin, GR
;
Lin, CJ
;
Kuo, HC
;
Chen, CY
Silicon defect and nanocrystal related white and red electroluminescences (EL) of Si-rich SiO2 based on metal-oxide-semiconductor (MOS) diode using transparent electrode contact are reported. The 500nm-thick Si-rich SiO2 film on n-type Si substrate is synthesized using multi-recipe Si-ion-implantation or plasma enhanced chemical vapor deposition (PECVD). After 1100 degrees C annealing for 3 hrs, the PL of Si-ion-implanted sample at 415 rim and 455 rim contributed by the weak-oxygen bond and neutral oxygen vacancy defects is observed. The white-light EL spectrum was observed at reverse bias, which originates from the tunneling and recombination intermediate state of SiO2:Si+ at a threshold current and voltage of 1.56 mA and 9.6 V, respectively. The maximum EL power of 110 nW is obtained at biased voltage of 25 V. The linear relationship between the optical power and injection current with a corresponding slope of 2.16 mu W/A is obtained. The 4-mn nanocrystallite silicon (nc-Si) is precipitated in the 240nm-thick PECVD grown silicon-rich SiO2 film annealed at 1100 degrees C for 30 min with Indium-tin-oxide (ITO) of 0.8 min in diameter, which contributes PL at 760 rim. The peak wavelength of the EL spectra coincides well with the PL. The threshold cur-rent and voltage are 86 V and 1.08 mu A, respectively. The power-current (P-I) slope is determined as 697 mu W/A. The carrier injection mechanism is dominated by Fowler-Nordheim(F-N) tunneling.
The super connectivity of the pancake graphs and the super laceability of the star graphs
(2005-06-12)
Lin, CK
;
Huang, HM
;
Hsu, LH
;
資訊工程學系
;
Department of Computer Science
A k-containerC(u, v) of a graph G is a set of k-disjoint paths joining u to v. A k-container C(u, v) of G is a k*-container if it contains all the vertices of G. A graph G is k*-connected if there exists a k*-container between any two distinct vertices. Let kappa(G) be the connectivity of G. A graph G is super connected if G is i*-connected for all 1 <= i <= kappa(G). A bipartite graph G is k*-laceable if there exists a k*-container between any two vertices from different parts of G. A bipartite graph G is super laceable if G is i*-laceable for all 1 <= i <= kappa(G). In this paper, we prove that the n-dimensional pancake graph P(n) is super connected if and only if n not equal 3 and the n-dimensional star graph S(n) is super laceable if and only if n not equal 3. (c) 2005 Elsevier B.V. All rights reserved.
The super laceability of the hypercubes
(2004-10-16)
Chang, CH
;
Lin, CK
;
Huang, HM
;
Hsu, LH
;
資訊工程學系
A k-container C(u, v) of a graph G is a set of k disjoint paths joining u to v. A k-container C(u, v) is a k*-container if every vertex of G is incident with a path in C(u, v). A bipartite graph G is k*-laceable if there exists a k*-container between any two vertices u, v from different partite set of G. A bipartite graph G with connectivity k is super laceable if it is i*-laceable for all i less than or equal to k. A bipartite graph G with connectivity k is f-edge fault-tolerant super laceable if G - F is i*-laceable for any 1 less than or equal to i less than or equal to k - f and for any edge subset F with F = f < k - 1. In this paper, we prove that the hypercube graph Q(r) is super laceable. Moreover, Qr is f-edge fault-tolerant super laceable for any f less than or equal to r - 2. (C) 2004 Elsevier B.V. All rights reserved.
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
(2005-06-01)
Lin, GR
;
Kuo, HC
;
Lin, CK
;
Feng, M
;
光電工程學系
A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
Voltage-controlled optical fiber coupler using a layer of low-refractive-index liquid crystal with positive dielectric anisotropy
(1995-12-01)
Pan, RP
;
Liou, SR
;
Lin, CK
;
交大名義發表
;
電子物理學系
A variable fiber directional coupler is made using liquid crystal as the intermediate cladding layer between two side-polished optical fibers. A nematic liquid crystal with low refractive index and positive dielectric anisotropy is used. An ac electric field is applied to the liquid crystal by applying a voltage across two parallel electrode stripes on the two sides of the fibers. The electric field rotates the molecular orientations and changes the refractive index of the liquid crystal. The coupling ratio between the two fibers is then controlled by the applied voltage. The dependence of the coupling ratio on the applied voltage is studied for various light wavelengths, including a continuous variable range between 1.272 mu m and 1.310 mu m.
Wide-sense nonblocking for symmetric or asymmetric 3-stage Clos networks under various routing strategies
(2004-04-10)
Chang, FH
;
Guo, JY
;
Hwang, FK
;
Lin, CK
;
應用數學系
Benes established the notion of wide-sense nonblocking by constructing an example on the symmetric 3-stage Clos network under packing which requires less hardware compared to strict nonblocking. This has remained the only example of a wide-sense non-blocking 3-stage Clos network which is not strictly nonblocking. In this paper, we study packing as well as several other routing strategies which have been studied in the literature and proved that no other example exists for the symmetric 3-stage Clos network. We then extend the study to asymmetric 3-stage Clos network for the first time. In particular, we extend Benes example to asymmetric 3-stage Clos network and show that these are the only two possible examples for the strategies under study. (C) 2003 Elsevier B.V. All rights reserved.