Browsing by Author "Lin, Chih-Pin"

Now showing 1 - 4 of 4

Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors
(2019-02-01)
Chen, Po-Chun
;
Lin, Chih-Pin
;
Hong, Chuan-Jie
;
Yang, Chih-Hao
;
Lin, Yun-Yan
Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 Am-1 for a channel length of 400 nm, contact resistance of 15 km, field-effect mobility of 15.5 cm(2)V(-1)s(-1), and the average on-off current ratio of 10(8) were successfully demonstrated
Fast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2
(2014)
Liu, Pang-Shiuan
;
Chen, Chang-Hsiao
;
Hsu, Wei-Ting
;
Lin, Chih-Pin
;
Lin, Tzu-Ping
P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 mu s has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.
Grain Size and Plasma Doping Effects on CVD-based 2D Transition Metal Dichalcogenide
(2016)
Lin, Chih-Pin
;
Lin, Ching-Ting
;
Liu, Pang-Shivan
;
Yu, Ming-Hue
;
Hou, Tuo-Hung
Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.
Grain Size Effect of Monolayer MoS2 Transistors Characterized by Second Harmonic Generation Mapping
(2015)
Lin, Chih-Pin
;
Lyu, Li-Syuan
;
Lin, Ching-Ting
;
Liu, Pang-Shiuan
;
Chang, Wen-Hao
We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.