Browsing by Author "Lin, Ger-Pin"

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Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction
(2017-09-01)
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
Chou, Hung-Ju
;
Li, Ching-I
;
Lin, Ger-Pin
Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n(+)/p junction are studied in this work. At an adequately high ion-implantation temperature (150 degrees C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting similar to 1 x 10(6) J(ON)/J(OFF) ratio is achieved.