Browsing by Author "Lin, Hong-Nien"

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Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
(2006-08-01)
Lin, Hong-Nien
;
Chen, Hung-Wei
;
Ko, Chih-Hsin
;
Ge, Chung-Hu
;
Lin, Horng-Chih
The correlation between channel mobility gain (Delta mu), linear drain-current gain (AIdlin), and saturation draincurrent gain (Delta I-dsat) of nanoscale strained CMOSFETs are reported. From the plots of Delta I-dlin versus Delta I-dsat and ballistic efficiency (B-sat,B-PSS), the ratio of source/drain parasitic resistance (R-sat,R-PSS) to channel resistance (R-CH,R-PSS) of strained CMOSFETs can be extracted. By plotting Delta mu versus Delta I-dlin, the efficiency of Delta mu translated to Delta I-dlin is higher for strained pMOSFETs than strained nMOSFETs due to smaller R-SD,R-PSS-to-R-CH,R-PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the R-SD,R-PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the Delta I-dli -to-Delta mu sensitivity is maintained until R-SD,R-PSS becomes comparable to/or higher than R-CH,R-PSS.
Strain-induced channel backscattering modulation in nanoscale CMOSFETs
(2006)
Chen, Hung-Wei
;
Lin, Hong-Nien
;
Ko, Chih-Hsin
;
Ge, Chung-Hu
;
Lin, Horng-Chih
The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.