Browsing by Author "Lin, Kuan-Liang"

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Electrode dependence of filament formation in HfO(2) resistive-switching memory
(2011-04-15)
Lin, Kuan-Liang
;
Hou, Tuo-Hung
;
Shieh, Jiann
;
Lin, Jun-Hung
;
Chou, Cheng-Tung
This study investigates bipolar and nonpolar resistive-switching of HfO(2) with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO(2) strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567915]
Electrode dependence of filament formation in HfO2 resistive-switching memory
(2011-04-15)
Lin, Kuan-Liang
;
Hou, Tuo-Hung
;
Shieh, Jiann
;
Lin, Jun-Hung
;
Chou, Cheng-Tung
This study investigates bipolar and nonpolar resistive-switching of HfO2 with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO2 strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567915]
Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memory
(2011-03-07)
Hou, Tuo-Hung
;
Lin, Kuan-Liang
;
Shieh, Jiann
;
Lin, Jun-Hung
;
Chou, Cheng-Tung
Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO(2)/Si structure with low RESET current of 50 mu A and RESET power of 30 mu W. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565239]
Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory
(2011-03-07)
Hou, Tuo-Hung
;
Lin, Kuan-Liang
;
Shieh, Jiann
;
Lin, Jun-Hung
;
Chou, Cheng-Tung
Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO2/Si structure with low RESET current of 50 mu A and RESET power of 30 mu W. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565239]
Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
(2012-04-01)
Luo, Wun-Cheng
;
Lin, Kuan-Liang
;
Huang, Jiun-Jia
;
Lee, Chung-Lun
;
Hou, Tuo-Hung
This letter proposes a novel technique for predicting with high confidence the disturbance of the resistive-switching random access memory (RRAM) RESET state based on ramped voltage stress. The technique yields statistical distributions and voltage acceleration parameters equivalent to those of a conventional constant voltage method. Several ramp rates and acceleration models were validated for the accuracy regarding conversion between the two methods. The proposed method not only reduces the time and cost of reliability analysis but also provides a quantitative link between disturbance properties and the widely available RRAM data measured by a linear voltage ramp. Additionally, the non-Poisson area scaling supports the localized filament model.
Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2
(2013-11-01)
Luo, Wun-Cheng
;
Hou, Tuo-Hung
;
Lin, Kuan-Liang
;
Lee, Yao-Jen
;
Lei, Tan-Fu
In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiOx/P+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory. (C) 2013 Elsevier Ltd. All rights reserved.
RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodology
(2012)
Luo, Wun-Cheng
;
Liu, Jen-Chieh
;
Feng, Hsien-Tsung
;
Lin, Yen-Chuan
;
Huang, Jiun-Jia
This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.
Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb Dilemma
(2013-11-01)
Luo, Wun-Cheng
;
Liu, Jen-Chieh
;
Lin, Yen-Chuan
;
Lo, Chun-Li
;
Huang, Jiun-Jia
A comprehensive study of SET speed-disturb dilemma in resistive-switching random access memory (RRAM) is presented using statistically based prediction methodologies, accounting for the stochastic nature of SET. An analytical percolation model has been successful in explaining the statistical Weibull distribution of SET time and SET voltage in addition to the power-law voltage-time dependence. Two prediction methodologies using constant voltage stress (CVS) and ramp voltage stress (RVS) are proposed to evaluate the SET speed-disturb properties. The RVS method reduces analysis time and cost and yields equivalent results as the CVS method. Furthermore, the RVS method is used to evaluate the device design space and the current status of RRAM technology to meet the strict requirement of the SET speed-disturb dilemma.
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
(2013-03-01)
Lin, Kuan-Liang
;
Hou, Tuo-Hung
;
Lee, Yao-Jen
;
Chang, Jhe-Wei
;
Lin, Jun-Hung
Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO2 and ZrO2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al2O3 and SiO2. Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO2, in contrast to the formation of oxygen-vacancy filaments in Al2O3. The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes. (c) 2013 The Japan Society of Applied Physics