Browsing by Author "Lin, Ming-Huei"

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Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
(2013-04-01)
Lin, Shi-Wei
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Wu, Jau-Yang
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Lin, Sheng-Di
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Lo, Ming-Cheng
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Lin, Ming-Huei
We have studied the structure and physical properties of an aluminum thin film grown on a (100) GaAs substrate. The X-ray diffraction (XRD) data shows that the Al film grown in situ by molecular beam epitaxy (MBE) is single crystalline. Compared with the polycrystalline film ex situ evaporated using an electron-gun (E-gun), the MBE-grown Al film has a high optical reflectivity in the visible and ultraviolet (UV) regime. In addition, the MBE-grown film has a 2-order-lower residue resistance, a 1-order-higher temperature coefficient of resistance, and a 2-order-larger magnetoresistance (MR) than the polycrystalline film. Owing to the long mean free time, the bulk-like electron-to-hole transition of Hall resistivity is observed for the first time in a nanoscale metal thin film. Our results suggest that MBE-grown Al thin films have great potential applications in metal-based nanoelectronics and nanophotonics. (C) 2013 The Japan Society of Applied Physics
Comparison of the clinical outcomes between fresh blastocyst and vitrified-thawed blastocyst transfer
(2012-12-01)
Ku, Pei-Yun
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Lee, Robert Kuo-Kuang
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Lin, Shyr-Yeu
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Lin, Ming-Huei
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Hwu, Yuh-Ming
To compare the clinical outcomes between fresh and vitrified-thawed day 5 blastocyst transfers. Retrospective case control study. Tertiary referral center. Patients 38 years of age or less who underwent IVF/ICSI cycles with fresh or frozen-thawed blastocysts transferred from June 1, 2009 to November 30, 2011 Vitrification and thawing of day 5 blastocysts using the Cryotop method. (Kitazato BioPharma Co., Ltd., Fuji city, Shizuoka, Japan) Clinical pregnancy rate, implantation rate, ongoing pregnancy rate, and multiple pregnancy rates. Of the 118 cycles in the fresh transfer group, 234 blastocysts were transferred. The clinical pregnancy rate was 66.1 % and implantation rate was 50.9 %. The ongoing pregnancy rate was 56.8 % and the rates for singleton and twin pregnancies were 53.7 % and 44.8 %. Of the 59 cycles in the vitrified-thawed group, 111 blastocysts were transferred. The clinical pregnancy rate was 59.3 % and implantation rate was 43.2 %. The ongoing pregnancy rate was 47.5 % and the rates for singleton and twin pregnancies were 60.7 % and 39.3 %. The clinical pregnancy rate, implantation rate and ongoing pregnancy rate did not differ significantly between the two groups. The implantation rates were not significantly different between the fresh and the vitrified-thawed groups. Thus, single embryo transfer may be considered in fresh cycles to decrease multiple pregnancy rates. The surplus embryos should be vitrified for the frozen embryo transfer to improve the cumulative pregnancy rate.
Experimental Analysis of Quasi-Ballistic Transport in Advanced Si nFinFETs Using New Extraction Method
(2018-09-01)
Lin, Ming-Huei
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Su, Pin
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Chen, Hou-Yu
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Lu, Jen-Hsiang
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Chang, Vincent S.
For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si nFinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si nFinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (similar to 60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.
Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors
(2017-09-01)
Chen, Po-Chun
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Chiu, Yu-Chien
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Zheng, Zhi-Wei
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Lin, Ming-Huei
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Cheng, Chun-Hu
In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high I-on/I-off of 5.7 x 10(5) and a high mu(FE) of 10.7 cm(2) V-1 s(-1). Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6 x 10(3), a low threshold voltage of -0.13 V, and a very high field-effect mobility of 28 cm(2) V-1 s(-1). This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.
Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
(2019-05-01)
Cheng, Chun-Hu
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Lin, Ming-Huei
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Chen, Hsin-Yu
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Fan, Chia-Chi
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Liu, Chien
In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
Improved Electrical Characteristics and Reliability of Multi-Stacking PNPN Junctionless Transistors Using Channel Depletion Effect
(2017-01-01)
Lin, Ming-Huei
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Shih, Yi-Jia
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Liu, Chien
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Chiu, Yu-Chien
;
Fan, Chia-Chi
This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >10(7). Besides, utilizing with the constant-voltage-stress measurement, the multi-PNPN channel junctionless FETs with a robust stress reliability was demonstrated.
Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels
(2018-12-05)
Liu, Chien
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Cheng, Chun-Hu
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Lin, Ming-Huei
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Shih, Yi-Jia
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Hung, Yu-Wen
In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of > 1 mu A/mu m, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of > 10(7) than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio. (C) 2018 The Electrochemical Society.
Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement
(2018-01-01)
Fan, Chia-Chi
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Tu, Chun-Yuan
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Lin, Ming-Huei
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Chang, Chun-Yen
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Cheng, Chun-Hu
In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of similar to 10mV and a large on/off current reatio (I-on/I-off) of >10(7). Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.