Browsing by Author "Lin, Shu-Yu"

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Core Excitation, Specific Dissociation, and the Effect of the Size of Aromatic Molecules Connected to Oxygen: Phenyl Ether and 1,3-Diphenoxybenzene
(2014-09-11)
Lin, Yi-Shiue
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Lin, Shu-Yu
;
Lee, Yuan T.
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Tseng, Chien-Ming
;
Ni, Chi-Kung
Near-edge X-ray absorption fine structure (NEXAFS) spectra of phenyl ether at the carbon K-edge and 1,3-diphenoxybenzene at both the carbon and oxygen K-edges were measured in the total ion yield mode using X-rays from a synchrotron and a reflectron time-of-flight mass spectrometer. Time-dependent density functional theory was adopted to calculate the carbon and oxygen K-edge NEXAFS spectra of phenol, phenyl ether, and 1,3-diphenoxybenzene. The assignments and a comparison of the experimental and calculated spectra are presented. The mass spectra of ionic products formed after X-ray absorption at various excitation energies are also reported. Specific dissociations were observed for the 1s --> pi* transition of phenyl ether. In comparison with phenol and phenyl ether, the dependence of the fragmentation on the excitation site and destination state was weak in 1,3-diphenoxybenzene, likely as a result of delocalization of the valence electrons and rapid randomization of energy.
Formation and IR spectrum of monobridged Si2H4 isolated in solid argon
(2020-05-29)
Lin, Shu-Yu
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Chou, Sheng-Lung
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Lin, Meng-Yeh
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Huang, Wen-Jian
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Huang, Tzu-Ping
The infrared (IR) spectrum of monobridged Si2H4 (denoted as mbr-Si2H4) isolated in solid Ar was recorded, and a set of lines (in the major matrix site) observed at 858.3 cm(-1), 971.5 cm(-1), 999.2 cm(-1), 1572.7 cm(-1), 2017.7 cm(-1), 2150.4 cm(-1), and 2158.4 cm(-1) were characterized. The species was produced by the electron bombardment of an Ar matrix sample containing a small proportion of SiH4 during matrix deposition. Upon photolysis of the matrix samples using 365 nm and 160 nm light, the content of mbr-Si2H4 increased. The band positions, relative intensity ratios, and D-isotopic shift ratios of the observed IR features are generally in good agreement with those predicted by the B3LYP/aug-cc-pVTZ method. In addition, the photochemistry of the observed products was discussed.
Infrared Absorption of Gaseous Benzoyl Radical C6H5CO Recorded with a Step-Scan Fourier-Transform Spectrometer
(2012-06-21)
Lin, Shu-Yu
;
Lee, Yuan-Pern
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應用化學系
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應用化學系分子科學碩博班
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Department of Applied Chemistry
A step-scan Fourier-transform infrared spectrometer coupled with a multipass absorption cell was utilized to monitor the gaseous transient species benzoyl radical, C6H5CO. C6H5CO was produced either from photolysis of acetophenone, C6H5C(O)CH3, at 248 nm or in reactions of phenyl radical (C6H5) with CO; C6H5 was produced on photolysis of C6H5Br at 248 nm. One intense band at 1838 +/- 1 cm(-1), one weak band at 1131 +/- 3 cm(-1), and two extremely weak bands at 1438 +/- 5 and 1590 +/- 10 cm(-1) are assigned to the C=O stretching (nu(6)), the C-C stretching mixed with C-H deformation (nu(15)), the out-of-phase C1C2C3/C5C6C1 symmetric stretching (nu(10)), and the in-phase C1C2C3/C4C5C6 antisymmetric stretching (nu(7)) modes of C6H5CO, respectively. These observed vibrational wavenumbers and relative IR intensities agree with those reported for C6H5CO isolated in solid Ar and with values predicted for C6H5CO with the B3LYP/aug-cc-pVDZ method. The rotational contours of the two bands near 1838 and 1131 cm(-1) simulated according to rotational parameters predicted with the B3LYP/aug-cc-pVDZ method fit satisfactorily with the experimental results. Additional products BrCO, C6H5C(O)Br, and C6H5C(O)C6H5 were identified in the C6H5Br/CO/N-2 experiments; the kinetics involving C6H5CO and C6H5C(O)Br are discussed.
Nonlinear Behavior Characterization of RF Active Devices Using Impedance-dependence X-parameters
(2010-01-01)
Chiu, Chia-Sung
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Lin, Shu-Yu
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Chen, Bo-Yuan
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Chen, Kun-Ming
;
Huang, Guo-Wei
This paper presents a nonlinear characterization of active device using polyharmonic distortion model formed by X-parameters. By means of the Polyharmonic distortion model characterized via nonlinear vector network analyzer makes it possible to achieve a good agreement between measured and simulated data in terms of power gain and intermodulation. Furthermore, large-signal validation of this model via X-parameters also shows a good match with measurements in RF LDMOS transistor without optimization. Results show that the X-parameters from nonlinear vector network analyzer appear to be a better method for nonlinear characterization.
Power Improvement for 65nm nMOSFET with High-Tensile CESL and Fast Nonlinear Behavior Modeling
(2010)
Chiu, Chia-Sung
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Chen, Kun-Ming
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Huang, Guo-Wei
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Lin, Shu-Yu
;
Chen, Bo-Yuan
In this paper, the power gain improvements by stress contact etch stop layer (CESL) in a 65-nm nMOSFET were studied. Compared to the conventional nMOSFET, the device with CESL stress shows an extra 6% power gain enhancement for the increased stress in the channel region. This study also presents the polyharmonic distortion (PHD) model extraction by X-parameters measurement when the power transistor was designed to work far from 50 ohms. By mean of this model, the accurate nonlinear behaviors of nMOSFET were obtained rapidly.