Browsing by Author "Lin, Tzu-Ping"

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Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
(2015-05-08)
Wang, Yu-Fen
;
Lin, Yen-Chuan
;
Wang, I-Ting
;
Lin, Tzu-Ping
;
Hou, Tuo-Hung
A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing. Typical synaptic devices based on filamentary resistive switching face severe limitations on the implementation of concurrent inhibitory and excitatory synapses with low conductance and state fluctuation. For overcoming these limitations, we propose a Ta/TaOx/TiO2/Ti device with superior analog synaptic features. A physical simulation based on the homogeneous (nonfilamentary) barrier modulation induced by oxygen ion migration accurately reproduces various DC and AC evolutions of synaptic states, including the spike-timing-dependent plasticity and paired-pulse facilitation. Furthermore, a physics-based compact model for facilitating circuit-level design is proposed on the basis of the general definition of memristor devices. This comprehensive experimental and theoretical study of the promising electronic synapse can facilitate realizing large-scale neuromorphic systems.
Fast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2
(2014)
Liu, Pang-Shiuan
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Chen, Chang-Hsiao
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Hsu, Wei-Ting
;
Lin, Chih-Pin
;
Lin, Tzu-Ping
P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 mu s has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
(2013-07-01)
Tseng, Hsueh-Chih
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Chang, Ting-Chang
;
Wu, Yi-Chun
;
Wu, Sei-Wei
;
Huang, Jheng-Jie
This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.