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Browsing by Author "Lin, Wen-Yan"

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    Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
    (2018-08-01)
    Wu, Cheng-Hsien
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    Lin, Shih-Kai
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    Pan, Chih-Hung
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    Chen, Po-Hsun
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    Lin, Wen-Yan
    In this letter, we determine the importance of the electrical field distribution and strength during the switching process by demonstrating different trends in the degree of reset and the reset pulse time. In general, a longer reset pulse time results in a higher reset energy; a higher reset energy leads to a higher degree of reset, which we obtainedby applying different width square waves. But quite notably, the opposite result was obtained using triangle waves, where a higher degree of reset occurred with a shorter rising time and lower reset energy. We believe that this is due to the electric field effect: if the voltage rises faster than the filament oxidation, the device can produce a larger effective electric field and a higher resistance in the reset process. To further investigate the mechanism, the procedure of the reset process was analyzed in detail, and COMSOL simulation is also carried out for confirmation.
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    Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
    (2016-09-26)
    Pan, Chih-Hung
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
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    Chang, Kuan-Chang
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    Chu, Tian-Jian
    In this letter, we demonstrate completely different characteristics with different operating modes and analyze the electrical field effect to confirm the filament dissolution behavior. The device exhibited a larger memory window when using a single voltage sweep method during reset process rather than the traditional double sweep method. The phenomenon was verified by using fast I-V measurement to simulate the two operating methods. A better high resistance state (HRS) will be obtained with a very short rising time pulse, but quite notably, lower power consumption was needed. We proposed the electrical field effect to explain the phenomenon and demonstrate distribution by COMSOL simulation. Published by AIP Publishing.
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