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學術出版;;Publications
會議論文;;Conferences Paper
Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
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Date
2006
Authors
Lee, Yao-Jen
Fan, Chia-Hao
Yang, Wen-Luh
Lin, Wen-Yan
Huang, Bohr-Ran
Chao, Tien-Sheng
Chuu, D. S.
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https://ir.lib.nycu.edu.tw/handle/11536/135232
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