Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
| dc.citation.epage | + | en_US |
| dc.citation.spage | 88 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Fan, Chia-Hao | en_US |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.author | Lin, Wen-Yan | en_US |
| dc.contributor.author | Huang, Bohr-Ran | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.author | Chuu, D. S. | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:22Z | |
| dc.date.available | 2017-04-21T06:48:22Z | |
| dc.date.issued | 2006 | en_US |
| dc.identifier.isbn | 1-4244-0205-0 | en_US |
| dc.identifier.journal | IPFA 2006: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135232 | |
| dc.identifier.wosnumber | WOS:000239918400017 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress | en_US |
| dc.type | Proceedings Paper | en_US |
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