Browsing by Author "Liou, Juin J."

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Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors
(2009-09-01)
Liu, Wen
;
Liou, Juin J.
;
Chung, Andy
;
Jeong, Yoon-Ha
;
Chen, Wei-Chen
Electrostatic discharge (ESD) performance of N-type double-gated Si nanowire (NW) thin-film transistors is investigated, for the first time, using the transmission line pulsing technique. The ESD robustness of these devices depends on the NW dimension, number of channels, plasma treatment, and layout topology. The failure currents, leakage currents, and ON-state resistances are characterized, and possible ESD protection applications of these devices for future NW field-effect-transistor-based integrated circuits are also discussed.
Failure Analysis of Gate-all-around Nanowire Field Effect Transistor Under TLP Test
(2014)
Zhang, Guoyan
;
Dong, Aihua
;
Liu, Nie
;
Tian, Rui
;
Yang, Xuejiao
Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.