Browsing by Author "Liu, Chun-Ting"

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Design and Realization of Delta-Sigma Analog-to-Digital Converter in LTPS Technology
(2009)
Tsai, Chia-Chi
;
Ker, Ming-Dou
;
Li, Yu-Hsuan
;
Kuo, Chung-Hung
;
Li, Chun-Huai
A delta-sigma analog-to-digital (A/D) converter designed and implemented with the thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mu m low-temperature polycrystalline silicon (LTPS) process. The experimental results have shown that the probability in the bit stream of the digital output from the delta-sigma modulator is correctly fit in the analog input voltage ratio. Such a bit stream can be converted into 8-bit digital code successfully under the operation voltage of 10V with thin film transistors (TFTs) on the glass substrate. The proposed delta-sigma AID converter can be further used to achieve the precise analog circuits for System-on-Panel (SOP) or System-on-Glass (SOG) applications, which enables the analog circuits to be integrated in the active matrix LCD (AMLCD) panels.
Design of Bandgap Voltage Reference Circuit with all TFT Devices on Glass Substrate in a 3-mu m UPS Process
(2008)
Lu, Ting-Chou
;
Ker, Ming-Dou
;
Zan, Hsiao-Wen
;
Kuo, Chung-Hung
;
Li, Chun-Huai
A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mu m LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degrees C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.
On-panel electrostatic discharge (ESD) protection design with thin-film transistor in LTPS process
(2007)
Ker, Ming-Dou
;
Chuang, Jie-Yao
;
Deng, Chih-Kang
;
Kuo, Chung-Hong
;
Li, Chun-Huai
The electrostatic discharge (ESD) robustness of diode-connected n-type thin-film transistors (N-TFTs) and diode-connected p-type thin-film transistors (P-TFTs) with different layout structures in a given low-temperature polycrystalline silicon (LTPS) process is investigated. By using the wafer-level transmission line pulsing (TLP) system, the high-current transient characteristics and the secondary breakdown current (It2) levels of the diode-connected TFTs under different device parameters and layout structures are directly measured on the glass substrate. Finally, one set of design rules for on-panel ESD protection design is suggested.
Temperature coefficient of diode-connected LTPS poly-Si TFTs and its application on the bandgap reference circuit
(2008)
Lu, Ting-Chou
;
Zan, Hsiao-Wen
;
Ker, Ming-Dou
;
Huang, Wei-Ming
;
Lin, Kun-Chih
The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195 ppm/degrees C, between 25 degrees C and 125 degrees C.