Design of Bandgap Voltage Reference Circuit with all TFT Devices on Glass Substrate in a 3-mu m UPS Process

Abstract

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mu m LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degrees C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.