Browsing by Author "Liu, SS"

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A silicon nanowire with a Coulomb blockade effect at room temperature
(2002-05-17)
Hu, SF
;
Wong, WZ
;
Liu, SS
;
Wu, YC
;
Sung, CL
An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.
Room temperature two-terminal characteristics in silicon nanowires
(2003-02-01)
Hu, SF
;
Wong, WZ
;
Liu, SS
;
Wu, YC
;
Sung, CL
Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured, on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. (C) 2003 Elsevier Science Ltd. All rights reserved
Spin-dependent delay time in electronic resonant tunneling at zero magnetic field
(2000)
Voskoboynikov, O
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The dependence of the phase tunneling time on electronic spin polarization in symmetric and asymmetric double-barrier semiconductor heterostructures is studied theoretically. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions are used for theoretical investigation of the electron spin influence on the delay time in tunneling processes. It is shown that the spin-orbit splitting in the dispersion relation for the electrons can provide a dependence of the delay time on the electron spin polarization without additional magnetic field. This dependence can be controlled by an external electric field and can be very pronounced for realistic double-barrier semiconductor heterostrctures. (C) 2000 Elsevier Science Ltd. All rights reserved.
Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Spin-dependent tunneling in double-barrier semiconductor heterostructures
(1999-05-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
Spin-dependent tunneling in symmetric and asymmetric double-barrier semiconductor heterostructures is studied. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions approach an used for a theoretical investigation of the influence of electron spin on the tunneling probability. It is shown that spin-orbit splitting in the dispersion relation for electrons in A(III)B(V) semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization without additional magnetic field. The dependence can be controlled by an external electric field, and may be significant for realistic models of double-barrier semiconductor heterostructures. [S0163-1829(99)02320-6].