Browsing by Author "Liu, Wen-Hsing"

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Interface effect of oxygen doping in polythiophene
(2009-06-01)
Liu, Chien-Cheng
;
Yang, Chia-Ming
;
Liu, Wen-Hsing
;
Liao, Hua-Hsien
;
Horng, Sheng-Fu
Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm(2)/V s and on-off ratio of 29,000 are obtained for dip-coated film on glass substrate. (C) 2009 Elsevier B.V. All rights reserved.
LABEL-FREE SENSOR
(2010-09-23)
Meng, Hsin- Fei
;
Hong, Sheng-Fu
;
Chao, Yu-Chiang
;
Liu, Chien-Cheng
;
Liu, Wen-Hsing
A label-free sensor is disclosed. The label-free sensor comprises a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and is in contact with the first electrode and the second electrode, wherein the semiconductor layer has a plurality of probe groups, which are bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance, which has bonding specificity with the probe groups. The semiconductor layer of the label-free sensor of the present invention is bonded with probe groups, and the detection of detected object is performed in instant, quick, rapid, and sensitive manner by measuring variation in electric current, thereby avoiding the use of the fluorescent reading equipment for reading fluorescent signals.