Browsing by Author "Liu Po-Tsun"

Now showing 1 - 10 of 10

Bidirectional scanning driving circuit
(2015-02-24)
Liu Po-Tsun
;
Chu Li-Wei
;
Zheng Guang-Ting
;
Chen Chun-Yen
;
Kuo Yi-Chun
The invention provides a bidirectional scanning driving circuit, which comprises N stages of driving modules. Driving module comprises an output unit, a forward input unit, and a reverse input unit. For the n-th stage driving module, the forward input unit receives a first input voltage and a front forward scan signal of any of the driving modules lower than or equal to (n−2)th stage for charging or discharging a control node of the output unit. The reverse input unit receives a second input voltage and a back reverse scan signal of any of the driving modules higher than or equal to (n+2)th stage for charging or discharging the control node of the output unit. When the forward input unit is charging the output unit, the output unit outputs a forward scan signal; when the reverse input unit is charging the output unit, the output unit outputs a reverse scan signal.
Flexible non-volatile memory
(2014-03-18)
Liu Po-Tsun
;
Fan Yang-Shun
A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.
High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof
(2012-11-29)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
(2013-10-22)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
Method for forming an interfacial passivation layer on the Ge semiconductor
(2011-12-06)
Liu Po-Tsun
;
Huang Chen-Shuo
;
Huang Yi-Ling
;
Cheng Szu-Lin
;
Sze Simon M.
The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
Method for removing germanium suboxide
(2014-04-08)
Liu Po-Tsun
;
Huang Chen-Shuo
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium.
METHOD FOR REMOVING GERMANIUM SUBOXIDE
(2013-07-04)
Liu Po-Tsun
;
Huang Chen-Shuo
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium.
Method of manufacturing semiconductor device
(2015-03-10)
Liu Po-Tsun
;
Wang Wei-Ya
;
Teng Li-Feng
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.
Resistive random access memory device and operating method thereof
(2014-09-23)
Liu Po-Tsun
;
Hsu Ching-Hui
;
Fan Yang-Shun
A resistive random access memory (RRAM) device and operating method are disclosed herein. The RRAM device includes at least one RRAM cell and a control circuit. The RRAM cell includes a bottom electrode, an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) layer, a Ti layer and a top electrode. The a-IGZO layer is disposed on the bottom layer. The Ti layer is disposed on the a-IGZO layer. The top electrode is disposed on the Ti layer. The control circuit is configured to provide at least one electrical signal to the RRAM cell, so as to change the resistance value of the RRAM cell.
Thin film transistor with UV light absorber layer
(2015-03-03)
Shieh Han-Ping D.
;
Liu Po-Tsun
;
Tsai Yun-Chu
;
Tsai Min-Yen
;
Teng Li-Feng
A thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity.